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采用二甲基二氯化锡(DMTC)为新前驱体,通过常压CVD法在硼硅玻璃基板上制备 SnO2∶F透明导电薄膜,研究了DMTC、TFA和 H2 O的含量对薄膜结构及光电性能的影响,研究表明当 F/Sn 物质的量比为1∶1、H2 O/Sn物质的量比为3∶2时,制备出可见光透过率84.17%、方块电阻9.2Ω/□且结晶性能良好的多晶 SnO2薄膜。通过与单丁基三氯化锡(MBTC)为前驱体所制备薄膜的性能进行比较,结果表明,两种前驱体所制备薄膜均具有四方金红石结构,利用DMTC不仅可以制备出与 MBTC性能相近的薄膜,同时薄膜表面更加均匀。

FTO (SnO2∶F)films were prepared via atmospheric pressure chemical vapor deposition on the bo-rosilicate glass substrate with a new precursor dimethyltin dichloride (DMTC).The influences of contents of DMTC, TFA and water on the structure and photoelectric properties of films were studied respectively.Results showed that when the molar ratio of F/Sn,H2 O/Sn was 1∶1 and 3∶2 respectively,the as-prepared film had a high visible light transmittance of 84.17% and a sheet resistance of 9.2 Ω/□ with a high crystallinity of polycrystalline SnO2 thin films.Comparative analyses of thin films prepared from different precursors,i.e.dimethyltin dichloride and monobu-tyltin trichloride (MBTC),indicated that both of the produced films had tetragonal rutile structure and similar per-formance,but film deposited using DMTC precursor was more uniform.

参考文献

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