采用直流双靶磁控溅射共沉积的方法制备了 W含量为75%(原子分数)的 W-Cu 薄膜,并通过 EDS、XRD、SEM、TEM等对 W-Cu薄膜沉积初期的微观形貌及组织结构进行了表征和分析。结果表明,沉积初期,随着沉积时间延长,W-Cu薄膜有逐渐晶化的趋势,并形成了 W(Cu)基亚稳态固溶体,且Cu在 W中的固溶度逐渐增加。沉积10 s时薄膜呈长程无序、短程有序的非晶态,局部有由于靶材粒子扩散不充分而形成的小于5 nm 的 W、Cu 纳米晶；20 s时局部纳米晶消失但晶化程度升高；30 s 时晶化显著。沉积初期 W-Cu 薄膜随沉积时间延长逐渐晶化的原因是沉积过程中高能量的原子或原子团与已沉积的原子碰撞,传递能量,促进原子进一步扩散,克服了薄膜的晶化形成能,从而形成了亚稳态的 W(Cu)固溶体。
W-Cu alloy thin films with 75% W were deposited by DC double targets magnetron co-sputtering. The composition,microstructure and organization structure of thin films were analyzed by XRD,EDS,SEM and TEM.The results showed that the structure of the W-Cu thin films was metastable supersaturated solid solution. With the incremental of deposition time,the thin films had a tendency to crystallization and the Cu solubility in-creased.After deposition for 10 s,the microstructure of W-Cu thin film was long-range disorder but short-range or-dered amorphous state and have formed W,Cu nano-crystalline with grain size of less than 5 nm in local area due to the insufficient particle diffusion of target.After 20 s,the local nano-crystalline disappeared but crystallization degree increased,and after 30 s,the grain size increased obviously.At the initial stage of deposition process,the reason of the crystallization is that high energy of atoms or atomic group collision with the deposited atoms,and transferred energy which promote the atomic diffusion and overcome the energy of crystallization,thus formed the metastable W(Cu)solid solution.
参考文献
| [1] | 王瑞;周灵平;汪明朴;朱家俊;李德意;李绍禄.磁控溅射Cu-W薄膜的组织与结构[J].材料科学与工程学报,2008(4):582-584,598. |
| [2] | Radic N.;Stubicar M..Microhardness properties of Cu-W amorphous thin films[J].Journal of Materials Science,199813(13):3401-3405. |
| [3] | Zhang RF;Li ZC;Liu BX.Metastable phase formed in immiscible Cu-W multilayers by ion mixing[J].Japanese journal of applied physics,200311(11):7009-7012. |
| [4] | 周铖;孙勇;郭中正;殷国祥;彭明军.磁控溅射沉积Cu-W薄膜的特征及热处理的影响[J].材料导报,2011(6):97-101. |
| [5] | Chu JP.;Lin CH.;Lin TN.;Wang SF.;Liu CJ..Characterizations of super hard Cu films containing insoluble W prepared by sputter deposition[J].Materials Chemistry and Physics,20012(2):286-289. |
| [6] | ZHOU Ling-ping;WANG Ming-pu;WANG Rui;LI Zhou;ZHU Jia-jun;PENG Kun;LI De-yi;LI Shao-lu.Enhanced adhesion of Cu-W thin films by ion beam assisting bombardment implanting[J].中国有色金属学会会刊（英文版）,2008(02):372-377. |
| [7] | Ma, Huan;Zou, Yu;Sologubenko, Alla S.;Spolenak, Ralph.Copper thin films by ion beam assisted deposition: Strong texture, superior thermal stability and enhanced hardness[J].Acta materialia,2015:17-28. |
| [8] | Vuellers, F. T. N.;Spolenak, R..Alpha- vs. beta-W nanocrystalline thin films: A comprehensive study of sputter parameters and resulting materials' properties[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2015Feb.27(Feb.27):26-34. |
| [9] | 周灵平;汪明朴;彭坤;朱家俊;傅臻;李周.双靶磁控溅射沉积Cu-W薄膜组织结构特征及其演变[J].中国有色金属学报（英文版）,2012(11):2700-2706. |
| [10] | M.J. O'KEEFE;J.T. GRANT;J.S. SOLOMON.Magnetron Sputter Deposition of A-15 and BCC Crystal Structure Tungsten Thin Films[J].Journal of Electronic Materials,19958(8):961-967. |
| [11] | Chang, Keke;Baben, Moritz to;Music, Denis;Lange, Dennis;Bolvardi, Hamid;Schneider, Jochen M..Estimation of the activation energy for surface diffusion during metastable phase formation[J].Acta materialia,2015:135-140. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%