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通过Sonogashira偶联等反应,合成了三嵌段化合物9,10-双-(对-(甲氧基二缩三乙二醇基)苯基乙炔基)蒽,通过1H NMR和基质辅助激光解吸电离时间飞行质谱(MALDI-TOF-MS)对其结构进行了表征.利用差示扫描量热仪(DSC)、偏光显微镜(POM)及小角X射线散射仪(SAXS)等技术手段对其本体自组装行为进行了研究,结果表明,化合物在固态相自组装成近晶A相(SmA相).光谱分析表明,该化合物继承了二取代蒽类发光材料具有高荧光量子产率(Φf)的特点,是一种性能良好的光致发光材料.

参考文献

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