以微米级SiO为原料,通过简单的高温煅烧、碳包覆和酸刻蚀制备多孔氧化硅/硅/碳复合材料,复合材料比表面积和平均孔径分别为32.9 m2/g和3 nm.纳米硅分散在缓冲介质氧化硅多孔体系中,表面包覆一层薄而均匀的碳层.所得的复合材料具有较好的循环稳定性,在0.3 mA/g下,50次循环后可逆容量保持在645.1 mA·h/g.多孔结构、氧化硅缓解了硅在脱嵌锂过程的体积膨胀,碳层提高了复合材料的导电性和结构稳定性.
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