{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"采用磁控溅射法在立方织构Ni-5%(原子分数,下同)W基底上沉积了Ag薄膜作为第二代高温超导带材--YBaCuO涂层导体的导电缓冲层,并通过后期在Ar气氛下热处理使Ag膜具有(200)择优取向.磁控溅射后Ag膜的择优取向为(111),随着热处理温度的升高,(200)择优取向强度增加.采用慢降温工艺即在900℃下恒温30min,然后以较慢的速率10℃/h降至800℃后样品随炉冷却,有利于Ag薄膜由(111)向(200)的择优生长转变.","authors":[{"authorName":"<span style=\"color:red\">李</span><span style=\"color:red\">凤</span><span style=\"color:red\">华</span>","id":"33c26d14-597a-4fee-8a92-6eba1a7fbde4","originalAuthorName":"李凤华"},{"authorName":"王威","id":"3e3d3338-7973-49d2-9d13-25465d3d9585","originalAuthorName":"王威"},{"authorName":"<span style=\"color:red\">李</span>英楠","id":"3c8c38f2-adbd-4b56-97b4-e7af76da365f","originalAuthorName":"李英楠"},{"authorName":"罗清威","id":"edf4ce6f-ad60-40fe-bb1c-e7d3fb3827ce","originalAuthorName":"罗清威"},{"authorName":"单玉桥","id":"b8ff4a22-6dee-48e1-be4a-c1528db27e84","originalAuthorName":"单玉桥"},{"authorName":"樊占国","id":"5b744756-dd5f-4c3d-9868-6b8356faf06c","originalAuthorName":"樊占国"},{"authorName":"卢亚峰","id":"de50094e-befa-4f64-97ea-79d7dfea0d5d","originalAuthorName":"卢亚峰"},{"authorName":"<span style=\"color:red\">李</span>成山","id":"7712c814-12eb-4002-9133-dc3b4c0a4391","originalAuthorName":"李成山"}],"doi":"","fpage":"1857","id":"0d9246e2-7201-4640-9b69-85fc21c719e6","issue":"11","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"a187f9a8-72e6-43ca-879e-7a6613d220e6","keyword":"YBaCuO涂层导体","originalKeyword":"YBaCuO涂层导体"},{"id":"c52e1db6-1a6d-48fd-aed4-23dc671646e6","keyword":"Ag","originalKeyword":"Ag"},{"id":"b5b1b580-8934-4247-a6f8-6de3df681ed7","keyword":"择优取向","originalKeyword":"择优取向"},{"id":"aba72c39-ac18-4532-8258-d4b431c55dae","keyword":"热处理","originalKeyword":"热处理"}],"language":"zh","publisherId":"gncl200911027","title":"热处理对立方织构Ni-5%(体积分数)W基带上Ag薄膜择优取向的影响","volume":"40","year":"2009"},{"abstractinfo":"通过二次冷轧铜棒并850℃恒温热处理,制备出具有较强立方织构的Cu基带。以硝酸银、亚硫酸钠和硫代硫酸钠为主要原料配制镀银液,在立方织构Cu基带上制备出具有较强Ag（200）择优取向的银镀层。在600℃恒温热处理30min后Ag膜仍具有（200）择优取向,而830℃热处理后,Ag会扩散到Cu基底中,重复镀银、热处理5次后,Ag膜具有（200）的择优取向并少量面内织构,所得Ag/立方织构Cu复合带材可作为第二代高温超导带材YBCO涂层导体的金属基底。","authors":[{"authorName":"<span style=\"color:red\">李</span><span style=\"color:red\">凤</span><span style=\"color:red\">华</span>","id":"abf5c3ef-a5d2-4cb7-8061-8d10e66fcb92","originalAuthorName":"李凤华"},{"authorName":"庞雪","id":"b39ebf51-cd24-4302-b2c3-6e5f81455199","originalAuthorName":"庞雪"},{"authorName":"罗清威","id":"24ccb4b9-643a-4528-9ef4-6c50a58a96d9","originalAuthorName":"罗清威"},{"authorName":"<span style=\"color:red\">李</span>英楠","id":"31dae43a-9fe9-46f1-8b23-c5b49d9f95f0","originalAuthorName":"李英楠"},{"authorName":"王威","id":"8f069e04-ddd1-4694-8f3d-c9ba7a62b0a9","originalAuthorName":"王威"},{"authorName":"冉阿倩","id":"7f174fa0-c00b-4b00-adfd-db38894e41f4","originalAuthorName":"冉阿倩"},{"authorName":"樊占国","id":"7d5e5d8b-90e7-4f68-8542-8671c3cd422c","originalAuthorName":"樊占国"}],"doi":"","fpage":"120","id":"91409edd-a396-4059-b131-30dc5e224f7e","issue":"1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"92380027-8bc7-42a5-bb63-758b27186225","keyword":"YBCO涂层导体","originalKeyword":"YBCO涂层导体"},{"id":"ab929192-79b2-4a18-a882-ead000877023","keyword":"立方织构","originalKeyword":"立方织构"},{"id":"5ed4f29b-0252-4440-bd91-9c9a1e46daf7","keyword":"Cu带","originalKeyword":"Cu带"},{"id":"9581864a-5655-44f9-a750-bcc6e4ca51bc","keyword":"化学镀银","originalKeyword":"化学镀银"}],"language":"zh","publisherId":"gncl201201032","title":"用于涂层导体的Ag/立方织构Cu复合基带的制备","volume":"43","year":"2012"},{"abstractinfo":"采用特殊的化学及物理处理方法,在钛合金表面制备TiO_2-PTFE复合膜层,该润滑膜由硬质阳极氧化膜与低摩擦系数的聚四氟乙烯(PTFE)结合而成,具有较好的自润滑特性.研究了TiO_2-PTFE复合膜层的组织形貌、物相组成以及元素组分,讨论了阳极氧化处理工艺和涂覆时间对PTFE涂覆量的影响.结果表明,TC4钛合金阳极氧化后形成了由锐钛相和金红石相双相晶型组成的纳米级TiO_2多孔膜,涂覆PTFE后,表面及膜孔处被PTFE聚合体所覆盖.TC4钛合金样品经过不同电压和不同氧化时间处理后,PTFE涂覆量趋于稳定.随着涂覆时间的延长,PTFE涂覆量逐渐增加,在最初5～20min内,涂覆量增加较快,超过20min后涂覆量增加缓慢.","authors":[{"authorName":"樊占国","id":"a121fb72-4c44-4909-b955-4229cfd24e67","originalAuthorName":"樊占国"},{"authorName":"衣晓红","id":"f0b9f86c-fd8e-419e-956e-e982b802c8f3","originalAuthorName":"衣晓红"},{"authorName":"苏海","id":"f5aedb69-a94b-49e7-9804-4c8d5f64b14b","originalAuthorName":"苏海"},{"authorName":"张景垒","id":"e127288e-5b02-43d6-9a8b-7c9a620b0ac2","originalAuthorName":"张景垒"},{"authorName":"<span style=\"color:red\">李</span><span style=\"color:red\">凤</span><span style=\"color:red\">华</span>","id":"520b8211-e460-4052-848a-9f6bc555edf6","originalAuthorName":"李凤华"}],"doi":"","fpage":"169","id":"04ac9b4a-934a-4543-b9e2-a5b1badc5371","issue":"1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"d882328f-39f4-4cd0-b2f5-502be5bddf27","keyword":"钛合金","originalKeyword":"钛合金"},{"id":"fb7c1724-6aa2-4a3e-8912-fa4437c10613","keyword":"阳极氧化","originalKeyword":"阳极氧化"},{"id":"06c814bb-4106-4c26-8343-689e1407d648","keyword":"TiO_2多孔膜","originalKeyword":"TiO_2多孔膜"},{"id":"816926d7-c651-4889-bb6c-62a3be8f5de1","keyword":"涂覆PTFE","originalKeyword":"涂覆PTFE"},{"id":"affb88a5-656f-47f8-92cd-d84e08064a16","keyword":"TiO_2-PTFE复合膜层","originalKeyword":"TiO_2-PTFE复合膜层"}],"language":"zh","publisherId":"gncl201001050","title":"TC4钛合金表面TiO_2-PTFE复合膜层的制备","volume":"41","year":"2010"},{"abstractinfo":"BaPbO3(BPO)具有优良的导电性,稳定的化学性质,其晶格常数a与2aYBCO相近,有望成为YBCO超导带材的导电隔离层.实验采用两种化学溶液沉积(CSD)法,以BaCO3、PbO为溶质, EDTA-Cit为螯合剂的方法(简称无机法)和以乙酸钡、乙酸铅为溶质,以丙酸为溶剂的方法(简称有机法)在单晶YSZ(100)、LAO(100)基底上通过旋转涂覆和热处理生长BPO薄膜.实验表明700℃的热处理是形成BPO相的适宜温度,低温段的保温和缓慢升温有利于形成连续均匀的BPO薄膜.经XRD分析,采用两种方法制取的薄膜均为单相的BPO.与BPO粉末的XRD相比,后一种方法制取的BPO薄膜在(100)和(200)衍射峰明显增强,表明其在单晶LAO基底上实现了一定程度的外延生长,但没有实现单晶生长.在扫描电子显微镜下观察,后一种方法制取的薄膜较前一方法均匀、致密.","authors":[{"authorName":"高锋","id":"098784e0-1087-44d9-934b-8671425161a2","originalAuthorName":"高锋"},{"authorName":"<span style=\"color:red\">李</span><span style=\"color:red\">凤</span><span style=\"color:red\">华</span>","id":"ce3b11f8-ca11-46e9-823e-cf533e688bf1","originalAuthorName":"李凤华"},{"authorName":"王娜","id":"eb470f61-a6f5-47d2-b102-dc249aa323c4","originalAuthorName":"王娜"},{"authorName":"卢亚峰","id":"86645619-185d-40d5-ac89-e95935beb33f","originalAuthorName":"卢亚峰"},{"authorName":"樊占国","id":"d424d9d6-9049-49ee-8349-cbcf0413a196","originalAuthorName":"樊占国"}],"doi":"","fpage":"1131","id":"04d8c062-c058-438a-ac5c-2b364a3af7e6","issue":"7","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"a72eff12-497a-43b6-a4d9-e9d1982d9442","keyword":"BaPbO3","originalKeyword":"BaPbO3"},{"id":"258ad84a-825d-4c20-905e-c64b6ea0f52e","keyword":"CSD","originalKeyword":"CSD"},{"id":"766ab8e2-359c-400a-9610-c16584faa5fb","keyword":"YBCO","originalKeyword":"YBCO"},{"id":"28c8a83a-5420-4121-975c-6558b28084dc","keyword":"隔离层","originalKeyword":"隔离层"},{"id":"2f895c23-1a26-4363-972f-1738a654a35c","keyword":"超导","originalKeyword":"超导"}],"language":"zh","publisherId":"gncl200807022","title":"化学溶液沉积法制备BaPbO3膜的研究","volume":"39","year":"2008"},{"abstractinfo":"在常压下采用经济、适合规模化生产的化学溶液沉积法生长外延的La1-xSrxTiO3薄膜, 为YBa2Cu3O7-σ(YBCO)涂层导体提供导电缓冲层. 前驱溶液经旋转涂覆在单晶LaAlO3(001)基底上, 在纯氩气氛下分别于840, 890, 940和990 ℃恒温60 min制备薄膜. X射线衍射(XRD)分析, 在890～990 ℃的热处理条件下, 均得到纯净的具有良好外延性的La1-xSrxTiO3薄膜. 通过扫描电子显微镜(SEM)和扫描隧道显微镜(STM)观察, 样品表面光滑致密, 膜厚约为180 nm. 通过半定量能谱(EDS)分析, 确定薄膜成分为La0.4Sr0.6TiO3, 表明热处理过程中元素La部分挥发. 在890 ℃热处理温度下制得薄膜的电阻率约为1×10-2 Ω · cm.","authors":[{"authorName":"高锋","id":"ba8b223f-3c51-436f-b198-5708e4e135fd","originalAuthorName":"高锋"},{"authorName":"<span style=\"color:red\">李</span><span style=\"color:red\">凤</span><span style=\"color:red\">华</span>","id":"172e7717-bbf9-4278-96dd-4f9df791279f","originalAuthorName":"李凤华"},{"authorName":"<span style=\"color:red\">李</span>英楠","id":"c71603cc-9641-4db0-ae27-0606ceaa2604","originalAuthorName":"李英楠"},{"authorName":"王娜","id":"60c19b19-a201-43b7-ad81-a5798fd8dc97","originalAuthorName":"王娜"},{"authorName":"樊占国","id":"165bcb49-98b7-47a2-b6b7-ad44e2e157d1","originalAuthorName":"樊占国"}],"doi":"","fpage":"63","id":"138568b8-327d-4e45-9503-fc2fbbf93194","issue":"1","journal":{"abbrevTitle":"ZGXTXB","coverImgSrc":"journal/img/cover/ZGXTXB.jpg","id":"86","issnPpub":"1000-4343","publisherId":"ZGXTXB","title":"中国稀土学报"},"keywords":[{"id":"21ced585-88d3-4d1b-8d57-b96bdb94c465","keyword":"化学溶液沉积","originalKeyword":"化学溶液沉积"},{"id":"340fa89e-da9a-43ac-97fa-80393877115e","keyword":"La0.5Sr0.5TiO3","originalKeyword":"La0.5Sr0.5TiO3"},{"id":"537e2cbc-97ed-4e2f-b8c6-347675d4df30","keyword":"缓冲层","originalKeyword":"缓冲层"},{"id":"d855b8d5-b670-4eca-8856-2a6526be36ed","keyword":"超导薄膜","originalKeyword":"超导薄膜"},{"id":"1532529a-4835-4ff0-83c0-0502aa0d1ece","keyword":"稀土","originalKeyword":"稀土"}],"language":"zh","publisherId":"zgxtxb200901012","title":"化学溶液沉积法在LaAlO3基底上制备La0.5 Sr0.5 TiO3 外延薄膜","volume":"27","year":"2009"},{"abstractinfo":"电子背散射衍射技术(electron backscattered diffraction,EBSD)是一项新型的微区织构分析方法,本文介绍了EBSD技术在REBaCuO(RE=稀土元素,包括Y、Nd等)超导体织构分析上的应用.REBaCuO单位晶胞的伪立方特性导致其菊池花样易被90°误标定,识别低衍射强度的特征菊池带并正确标定菊池花样是减少自动取向误标定的有效方法.本实验利用EBSD技术实现了区域熔炼NdBaCuO超导块材微区织构的自动取向成像分析,揭示了区熔NdBaCuO样品的晶体生长特征.EBSD技术能把晶粒取向与微观结构联系起来,是晶体微区织构分析的强有力工具.","authors":[{"authorName":"王珏","id":"8c3d7f1b-8275-4429-97d5-348bc6823795","originalAuthorName":"王珏"},{"authorName":"薛向欣","id":"ab1f3d4d-6b92-45a1-8995-f5b7d57377d0","originalAuthorName":"薛向欣"},{"authorName":"樊占国","id":"0d443605-bb1b-42e4-8142-5562ac4fd9a2","originalAuthorName":"樊占国"},{"authorName":"<span style=\"color:red\">李</span><span style=\"color:red\">凤</span><span style=\"color:red\">华</span>","id":"0092c37c-1f9f-4b85-a0a1-1c6112951010","originalAuthorName":"李凤华"}],"doi":"","fpage":"253","id":"20a7ca77-c8ea-41f2-b8d2-668b8c6f409d","issue":"3","journal":{"abbrevTitle":"DWWLXB","coverImgSrc":"journal/img/cover/DWWLXB.jpg","id":"19","issnPpub":"1000-3258","publisherId":"DWWLXB","title":"低温物理学报   "},"keywords":[{"id":"e1252778-7d79-4aea-8d24-a55ab7c01154","keyword":"电子背散射衍射","originalKeyword":"电子背散射衍射"},{"id":"82ed3539-6440-45be-998d-3af1b69f4b54","keyword":"织构","originalKeyword":"织构"},{"id":"0bdabad3-049f-46ec-8b23-3f1bdfd2de9a","keyword":"微区取向","originalKeyword":"微区取向"},{"id":"5d28c42a-91fb-4c8e-a5d0-4802f27e0037","keyword":"高温氧化物超导体","originalKeyword":"高温氧化物超导体"}],"language":"zh","publisherId":"dwwlxb200903017","title":"区域熔炼NdBaCuO超导体织构的EBSD研究","volume":"31","year":"2009"},{"abstractinfo":"电泳共沉积了含Ag的YBa2Cu3O7-δ厚膜.共沉积膜中的Ag含量随着原料中Ag量的增加而增加.YBa2Cu3O7-δ与Ag两种粒子吸附质子所带电量之间的关系为 QYBCO=-0.1638QAg+0.1519F.添加剂聚乙二醇消弱了固体粒子之间的静电斥力作用,使膜的表面光滑平整.在Ag基带表面有垂直于基带面的沿a-b面生长织构形成.","authors":[{"authorName":"<span style=\"color:red\">李</span><span style=\"color:red\">凤</span><span style=\"color:red\">华</span>","id":"ccf55938-d677-4cd5-985f-6012a9da8973","originalAuthorName":"李凤华"},{"authorName":"樊占国","id":"ceb1dff0-d5f7-4cbc-9012-dda202c66202","originalAuthorName":"樊占国"},{"authorName":"刘常升","id":"bf1fc33f-ac33-42df-9b27-583d507c1e58","originalAuthorName":"刘常升"},{"authorName":"王珏","id":"9bc467ac-23ca-44bd-bf4a-2ee91565f517","originalAuthorName":"王珏"}],"doi":"10.3969/j.issn.1000-3258.2005.01.003","fpage":"13","id":"21266de2-1667-4481-9798-afc0c75a18e0","issue":"1","journal":{"abbrevTitle":"DWWLXB","coverImgSrc":"journal/img/cover/DWWLXB.jpg","id":"19","issnPpub":"1000-3258","publisherId":"DWWLXB","title":"低温物理学报   "},"keywords":[{"id":"aca5cb77-90c9-48a2-8a07-d72b421f160b","keyword":"YBa2Cu3O7-δ","originalKeyword":"YBa2Cu3O7-δ"},{"id":"f04e2b42-122e-45a9-8b90-3e3871250ce2","keyword":"Ag","originalKeyword":"Ag"},{"id":"f74f8830-329a-442c-8892-79321d27e9fd","keyword":"电泳共沉积","originalKeyword":"电泳共沉积"},{"id":"f96fc339-b8d5-4fdf-83e3-425c60174516","keyword":"添加剂","originalKeyword":"添加剂"}],"language":"zh","publisherId":"dwwlxb200501003","title":"电泳共沉积含Ag的YBa2Cu3O7-δ厚膜","volume":"27","year":"2005"},{"abstractinfo":"根据XRD衍射图谱分析了Cu加工的择优取向行为,采用极密度相除的方法对March-Dollase函数求解过程进行了简化,使之可以直接根据XRD衍射图谱的若干峰值算出r值,间接计算择优取向的体积分数.把实测样品的XRD衍射花样与由Rietveld程序根据March-Dollase函数反推的XRD衍射花样进行对比,发现当r值小于0.45时两者符合良好,说明在此条件下(r<0.45)本数值计算方法对r值的计算准确可靠,能够估算择优取向体积分数.","authors":[{"authorName":"<span style=\"color:red\">李</span>英楠","id":"d1cd23a2-98d8-410b-82a5-28c10e06e3c6","originalAuthorName":"李英楠"},{"authorName":"<span style=\"color:red\">李</span><span style=\"color:red\">凤</span><span style=\"color:red\">华</span>","id":"3ff7b308-736f-4fe9-b566-1e12b63897e3","originalAuthorName":"李凤华"},{"authorName":"樊占国","id":"df127309-3299-4d54-ab72-c7fae55899d9","originalAuthorName":"樊占国"},{"authorName":"<span style=\"color:red\">李</span>成山","id":"41bade36-d7a0-42fe-8a5c-5684ae46198c","originalAuthorName":"李成山"},{"authorName":"卢亚锋","id":"327e2001-0b3d-4ef5-812d-ab61922b2da0","originalAuthorName":"卢亚锋"}],"doi":"","fpage":"1","id":"2ca736a9-ed46-416b-9a84-3104ef657a0d","issue":"8","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"f8611cbd-b84a-46b6-90f0-a9a66935eede","keyword":"冷轧","originalKeyword":"冷轧"},{"id":"7c34887b-16b0-4f15-add2-92abbffb1ce6","keyword":"再结晶","originalKeyword":"再结晶"},{"id":"04d64544-5a24-4371-8120-517231be7499","keyword":"March-Dollase函数","originalKeyword":"March-Dollase函数"},{"id":"827f91e6-4e6d-4474-9898-99891a8faf68","keyword":"择优取向","originalKeyword":"择优取向"}],"language":"zh","publisherId":"cldb200908001","title":"March-Dollase函数在计算铜带择优取向上的应用","volume":"23","year":"2009"},{"abstractinfo":"以Ni合金为基底的YBCO涂层导体具有三明治结构,从下至上分别是:Ni合金、缓冲层、YBCO涂层与稳定层.在实用超导薄膜内部,局域超导电流由于晶粒弱连接、缺陷或裂纹等原因突然消失的情况下,一旦能量耗散超过临界值将会导致超导薄膜失超.在典型的YBCO涂层导体结构中,由于缓冲层是绝缘的氧化物,只能通过顶层的Ag或Cu稳定层的分流来实现电流传输方向的调整.如果在YBCO与正常金属基底之间存在连续的导体连接,即缓冲层导电,就可以不需稳定层,减少涂层导体的整体厚度,提高工程临界电流密度JE·如果钙钛矿导电缓冲层均匀无裂纹且足够厚,就可以起到隔离、外延、电流传输三重功效,同时提高JE·采用伞化学溶液法制备了具有(001)择优取向的BaPbO3,La0.5Sr0.5TiO3钙钛矿导电缓冲层与YBCO涂层,对于探索低成本的实用化工艺路线具有重要的实际应用价值.","authors":[{"authorName":"<span style=\"color:red\">李</span><span style=\"color:red\">凤</span><span style=\"color:red\">华</span>","id":"2671417f-ffa8-4a05-ac85-51362788e236","originalAuthorName":"李凤华"},{"authorName":"罗清威","id":"f711207c-eb33-4e4f-890a-cd49fe5be659","originalAuthorName":"罗清威"},{"authorName":"<span style=\"color:red\">李</span>英楠","id":"4343de80-d455-4044-a3b0-48628870c1f0","originalAuthorName":"李英楠"},{"authorName":"樊占国","id":"900e8e12-e592-4019-8350-35f5053e6d43","originalAuthorName":"樊占国"}],"doi":"10.3969/j.issn.1671-6620.2010.03.007","fpage":"189","id":"4a1738aa-d753-43be-87c0-07343dc4f6aa","issue":"3","journal":{"abbrevTitle":"CLYYJXB","coverImgSrc":"journal/img/cover/CLYYJXB.jpg","id":"17","issnPpub":"1671-6620","publisherId":"CLYYJXB","title":"材料与冶金学报"},"keywords":[{"id":"226e800d-29a7-40c4-baf2-e4e53a73ae78","keyword":"YBCO涂层导体","originalKeyword":"YBCO涂层导体"},{"id":"b67e537b-bb6b-4d89-9512-0c09706ab3a0","keyword":"导电缓冲层","originalKeyword":"导电缓冲层"},{"id":"61fe9667-2f08-4733-8f1c-1883a52efbff","keyword":"钙钛矿","originalKeyword":"钙钛矿"},{"id":"52a31a4e-f6dd-4e34-95bf-51627e66f12b","keyword":"临界电流密度","originalKeyword":"临界电流密度"}],"language":"zh","publisherId":"clyyjxb201003007","title":"采用钙钛矿导电缓冲层提高YBCO涂层导体临界电流密度的可行性研究","volume":"09","year":"2010"},{"abstractinfo":"用化学法在Ni-5％W基底上制备Gd掺杂CeO2膜.以乙酸铈((CH3CO2)3Ce(Ⅲ))、硝酸钆(GdN3O9)为起始原料,按照阳离子Ce3+:Gd3+为4:1的比例溶解于丙酸(C2H5COOH)中制成前驱液.将前驱液旋涂在Ni-5％W基底上,在4％H2/Ar气氛下进行1100℃热处理,形成立方织构的Gd掺杂CeO2膜.采用XRD和SEM对不同旋涂转速工艺制备的CeO2膜进行晶体结构和微观形貌的检测和分析.以总阳离子浓度为1.2 mol/L前驱液经过3000 r/min,60 s的涂覆工艺,经过二次涂覆和1100℃热处理的CeO2膜结晶程度高,无裂纹,有立方织构.Ce3+在4％H2/Ar还原性气氛里可以转变为Ce4+.","authors":[{"authorName":"<span style=\"color:red\">李</span>英楠","id":"273c3299-5182-41a4-af64-f5997c81999e","originalAuthorName":"李英楠"},{"authorName":"<span style=\"color:red\">李</span><span style=\"color:red\">凤</span><span style=\"color:red\">华</span>","id":"c730bd3d-fbfd-4111-b924-8bda6cfc4a9d","originalAuthorName":"李凤华"},{"authorName":"罗清威","id":"0c78c3f5-08a7-47d5-8fd1-7a8c9353faa5","originalAuthorName":"罗清威"},{"authorName":"樊占国","id":"bd4c3f74-3d08-40f8-a7a0-605df2212bb1","originalAuthorName":"樊占国"},{"authorName":"<span style=\"color:red\">李</span>成山","id":"77290a8f-926e-4e3c-8c13-dcff1475b8e6","originalAuthorName":"李成山"},{"authorName":"卢亚峰","id":"263022ea-ae75-4b3d-bcc2-a2eea1d2ecf9","originalAuthorName":"卢亚峰"}],"doi":"","fpage":"443","id":"53770cb3-5631-44e7-9570-73ff35e14fd5","issue":"2","journal":{"abbrevTitle":"XYJS","coverImgSrc":"journal/img/cover/XYJS.jpg","id":"67","issnPpub":"0258-7076","publisherId":"XYJS","title":"稀有金属"},"keywords":[{"id":"f9c0f576-c3a9-4cb0-9ffe-cbdce7f68893","keyword":"化学法","originalKeyword":"化学法"},{"id":"e48ede14-75dc-4ade-9b0e-dcfb8be33de8","keyword":"Ni-5％W基底","originalKeyword":"Ni-5％W基底"},{"id":"9a00064b-c52f-4d8b-b4b9-f54099664cdd","keyword":"掺杂","originalKeyword":"掺杂"},{"id":"f3162ba9-a4ea-46e0-8dbf-bfc8195dcf41","keyword":"CeO2","originalKeyword":"CeO2"}],"language":"zh","publisherId":"xyjsclygc201502036","title":"化学法在Ni-5％W基底上制备Gd掺杂CeO2膜","volume":"44","year":"2015"}],"totalpage":21,"totalrecord":204}