采用简化的电化学抛光工艺得到了具有平整表面的铜箔,然后分别以电化学抛光前后的铜箔为基底,通过化学气相沉积法制备了石墨烯,利用原子力显微镜、光学显微镜、扫描电镜、电子能谱仪、拉曼光谱和I-V特性电学测试仪等研究了铜箔表面形貌与石墨烯质量的关联,并通过表面氧化法来判断石墨烯是否在基底上生长完全.结果表明:在抛光铜箔上生长的石墨烯缺陷较少、形貌完整,并且导电性能明显提高;表面氧化法可以快速准确判断石墨烯的生长质量.
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