采用磁控溅射工艺在微波腔体耦合器内壁沉积了银/铜双层膜,并对该膜的电性能以及膜基结合强度等进行了研究.结果表明：采用磁控溅射法沉积的银/铜双层膜和基体的结合强度可达5．0 MPa；其中,内壁沉积有2μm银/2μm 铜双层膜的耦合器的电性能最佳,耦合度为5．75~6．20 dB,隔离度为31．02 dB,端口驻波值为24．43 dB,均达到了电镀的指标,插入损耗小于1．70 dB,优于电镀的；该工艺用银量少,无污染,可替代电镀在微波器件表面沉积功能镀层.
Ag/Cu double-layer film was doposited on internal wall of coupled cavity by magnetron sputtering process,and the electrical performance of the film and the film-substrate adhesion strength were studied.The results show that the adhesion strength between the double film and the substrate up to 5 .0 MPa.The coupled cavity with 2μm Cu/2μm Ag has the best eletrical performance,its coupling-degree was between 5.75 dB and 6.20 dB, isolation and port standing wave were 31.02 dB and 24.43 dB,respectively,these parameters were all up to the electroplating standard.Insertion losses of the coupled cavity was less than 1.70 dB,completely better than the electroplating standard.The process of low Ag coating costs and non-polluting could be used as an alternative method for the plating process.
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