通过在硅铝合金熔体中添加不同原子分数(0,10%,20%,30%)的锡制备了合金铸锭,研究了锡的添加对该合金铸锭中初晶硅枝晶宽度及回收率的影响.结果表明:初晶硅枝晶宽度随着锡含量的增加而增大,当合金铸锭中硅原子分数为31.86%、锡原子分数由0增至30%时,初晶硅平均枝晶宽度由490μm增大至710μm;较低硅含量合金铸锭中的初晶硅枝晶宽度较大,锡的添加对枝晶宽度的增大效果也更明显;初晶硅的回收率随着锡含量的增加而增大,当锡原子分数由0增至30%时,实际回收率由62%增至85%.
Different contents (0,10at%,20at%,30at%)of Sn were added into Si-Al alloy melt and then the alloy ingots were prepared.The effects of Sn addition on the dendrite width and recovery ratios of the primary silicon in the alloy ingots were studied.The results show that the dendrite width of the primary silicon increased with the increase of Sn content.When the silicon content was 31.86at%,the average dendrite width of the primary silicon increased from 490μm to 710μm with the Sn content increasing from 0 to 30at%.In the alloy ingot with a relatively low silicon content,the dendrite width of the primary silicon was larger and the increase effect of Sn addition on the dentrite width was more obvious.The recovery ratio of primary silicon increased with the increase of Sn content. When the Sn content increased from 0 to 30at%,the real recovery ratio increased from 62% to 85%.
参考文献
[1] | 冯瑞华;马廷灿;姜山;黄可.太阳能级多晶硅制备技术与工艺[J].新材料产业,2007(5):59-62. |
[2] | 罗绮雯;陈红雨;唐明成.冶金法提纯太阳能级硅材料的研究进展[J].中国有色冶金,2008(1):12-14,23. |
[3] | 马晓东;张剑;李廷举.冶金法制备太阳能级多晶硅的研究进展[J].铸造技术,2008(9):1288-1291. |
[4] | 吕东;马文会;伍继君;杨斌;戴永年.冶金法制备太阳能级多晶硅新工艺原理及研究进展[J].材料导报,2009(5):30-33. |
[5] | Lee, W.;Kim, J.;Jang, B.-Y.;Ahn, Y.;Lee, H.;Yoon, W..Metal impurities behaviors of silicon in the fractional melting process[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,20111(1):59-62. |
[6] | Takeshi Yoshikawa;Kazuki Morita.Removal of phosphorus by the solidification refining with Si-Al melts[J].Science and technology of advanced materials,20036(6):531-537. |
[7] | T. YOSHIKAWA;K. MORiTA.Refining of Si by the solidification of Si-Al melt with electromagnetic force[J].ISIJ International,20057(7):967-971. |
[8] | TAKESHI YOSHIKAWA;KAZUKI MORITA.Removal of B from Si by Solidification Refining with Si-Al Melts[J].Metallurgical and Materials Transactions, B. Process metallurgy and materials processing science,20056(6):731-736. |
[9] | TAKESHI YOSHIKAWA;KENTARO ARIMURA;KAZUKI MORITA.Boron Removal by Titanium Addition in Solidification Refining of Silicon with Si-Al Melt[J].Metallurgical and Materials Transactions, B. Process metallurgy and materials processing science,20056(6):837-842. |
[10] | Refining of silicon during its solidification from a Si-Al melt[J].Journal of Crystal Growth,20093(3):776. |
[11] | LEI HU;ZHI WANG;XUZHONG GONG.Impurities Removal from Metallurgical-Grade Silicon by Combined Sn-Si and Al-Si Refining Processes[J].Metallurgical and Materials Transactions, B. Process metallurgy and materials processing science,20134(4):828-836. |
[12] | 赵立新;王志;郭占成;李成义.低温净化冶金硅工艺[J].中国有色金属学报(英文版),2011(5):1185-1192. |
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