利用低压水射流辅助激光刻蚀加工技术对多晶硅进行刻蚀加工,通过正交试验分析了激光脉宽、频率、输入电流和水射流速度对加工表面质量的影响,得到了最终优化工艺参数.结果表明：最终优化工艺参数为低压水射流速度24 m.s－1、激光脉宽1．1 ms、频率40 Hz、电流180 A,此时槽体截面锥度、表面粗糙度、截面深度分别为1．2°,2．63μm,1．88 mm,槽体表面质量较好,边缘无开裂、无熔渣、无重铸层等缺陷.
Crystalline silicon was etched by low-pressure water-j et assisted laser etching technique.The effects of laser pulse width,frequency,input current and water-j et velocity on the machined surface were analyzed by orthogonal experiment and the ultimate optimum process parameters were obtained.The results show that the ultimate optimum process parameters were listed as follows:the low-pressure water-jet velocity of 24 m.s-1 ,the laser pulse width of 1.1 ms,the frequency of 40 Hz and the current of 180 A;When machined with this process,the cross-sectional taper,surface roughness and cross-sectional depth of the notch were 1.2°,2.63 μm and 1.88 mm respectively,and the notch surface quality was relatively good without edge burst,slag,recast layer and other defects.
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