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通过直接敷铜(DBC)工艺,在AlN陶瓷基板表面于1000~1060℃的敷接温度下制备Cu/AlN材料,利用机械剥离机、场发射扫描电子显微镜和X射线衍射仪分析了Cu/AlN的界面结合强度、界面微观形貌和物相组成.结果表明:铜箔和AlN陶瓷基板间的结合强度超过了8.00 N?mm-1,铜箔和AlN陶瓷之间存在厚度约为2μm的过渡层,过渡层中主要含有 Al2 O3、CuAlO2和Cu2 O 化合物;随着敷接温度升高,Cu/AlN的界面结合强度逐渐增大.

By direct bonded copper (DBC)process,Cu/AlN material was fabricated successfully on AlN ceramic substrate at bonding temperatures of 1 000-1 060 ℃.The bonding strength,morphology and phase composition of Cu/AlN interface were investigated by mechanic testing equipment,field emission scanning electron microscope and X-ray diffractometer.The results show that the bonding strength of Cu/AlN interface was more than 8.0 N?mm-1 ,a transition layer with thickness of 2μm was found between copper foil and AlN ceramic,the transition layer was mainly composed of Al2 O3 ,CuAlO2 and Cu2 O.The bonding strength of Cu/AlN interface increased as the bonding temperature gradually went up.

参考文献

[1] 岳瑞峰;王佑祥;陈春华.AlN陶瓷基板在空气中的热氧化行为探讨[J].硅酸盐学报,1998(5):565-570.
[2] 彭榕;周和平;宁晓山;林渊博;徐伟.铝/氮化铝电子陶瓷基板的制备及性能的研究[J].无机材料学报,2002(6):1203-1208.
[3] Shao-Kuan Lee;Wei-Hsing Tuan;Yin-Yin Wu.Microstructure-thermal properties of Cu/Al_2O_3 bilayer prepared by direct bonding[J].Journal of the European Ceramic Society,20132(2):277-285.
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