用电子背散射衍射(EBSD)技术对含3％Si(质量分数)低温渗氮 HiB钢二次再结晶时高斯晶粒的长大机制进行了研究。研究加热温度对高斯晶粒异常长大、磁感应强度和铁损的影响，分析高斯晶粒异常长大的机理。研究结果表明：1000~1050℃这一温度区间为二次再结晶的最重要温度区间，在这一温度区间下，晶界以大角度晶界为主，晶粒取向差主要分布在20°~55°之间，满足高能晶界(HE)模型的条件，由于大角度晶界的高迁移速率使得高斯晶粒迅速长大从而使磁感应强度增加最快、铁损值下降最快。
The growth mechanism of Goss grain during secondary recrystallization of low temperature nitriding HiB steel containing 3 mass%Si was studied by using electron back scattered diffraction (EBSD).The effects of heating temperature on abnormal growth of Goss grain,magnetic induction intensity and iron loss were studied,and the abnormal growth mechanism of Goss grain was analyzed.The results showed that temperature range of 1 000-1 050℃ was considered to be the most important temperature range of secondary recrystallization;in this range, the grain boundaries were mainly large-angle grain boundaries,and the misorientation mainly distributed between 20°and 55°,meeting the requirement of high energy (HE)model.Due to the high transfer rate of large-angle grain boundary,Goss grain grew up rapidly,making the magnetic induction intensity increase fastest and iron loss value decrease most quickly.
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