Bi2Sr2CaCu2Ox(Bi-2212)薄膜制备工艺相对简单,在低温下具有优异的性能,因此备受青睐,已经有不少研究小组采用真空或非真空方法成功制备出高质量的Bi-2212薄膜.一般而言,单晶基底被广泛用于Bi-2212薄膜的制备.与单晶基底不同,银基底无织构,但银基底的表面粗糙度等因素对Bi-2212的c轴织构和临界电流密度有影响.并且由于银基底对Bi系高温超导材料具有较低表面能,因此Bi-2212薄膜可以在银基底上稳定存在.以乙酸-氨水溶液为基础,开发了一种在银基底上制备Bi-2212薄膜的方法,对其中的关键步骤做了详细的研究,主要包括银基底的抛光、化学溶液的配制、烧结温度等.重复旋涂-热解过程可以消除经由一次旋涂热解带来的气泡;另外在银基底和低氧分压条件下,Bi-2212的成相温度点下移,在790℃保温5h即可制备出单相Bi-2212薄膜.扫描电镜(SEM)观测表明,薄膜表面均匀平整无裂纹.随着烧结温度的升高,Bi-2201相开始出现并且其衍射峰的强度随烧结温度的升高迅速增加;当烧结温度为850℃时,出现了一种棒状相,能谱(EDS)分析表明该棒状相是一种缺Cu相.
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