采用射频(RF)磁控溅射方法,在2种基底温度(TS =25,310℃)的基片上制备了结构为Si(111)/NdFeCo(610 nm)/Cr(10 nm)的薄膜样品,溅射氩气压保持在pAr=0.1 Pa.采用X射线衍射仪(XRD)、场发射扫描电镜(FE-SEM)、振动样品磁强计(VSM)、原子力显微镜(AFM)和磁力显微镜(MFM)等实验技术,研究了一步和三步快速退火(RTA-Ⅰ和RTA-Ⅱ)工艺对两种薄膜微结构和磁性的影响.结果显示,室温基底上沉积的样品呈非晶态,磁畴为面内磁畴结构;而加热基底上制备的样品则析出了Nd2 Fe17和Nd6 Fe13 Si纳米晶,垂直磁各向异性(PMA)反常增强,垂直磁各向异性能为K⊥=1.18×105 J·m-3,磁畴为平行条纹畴.在TA =500℃经过RTA-Ⅰ/-Ⅱ工艺后,基底加热样品析出的Nd2 Fe17和Nd6Fe13Si纳米晶继续长大,磁畴由条纹畴转变为磁斑畴.而室温基底上制备的薄膜经RTA-Ⅰ/-Ⅱ退火后则没有观察到界面硅化物,却发现结晶出的FeCo和Nd2 Fe15 Co2纳米晶粒大小和取向敏感地依赖于退火工艺.即一步快速退火工艺有利于析出(111)织构的Nd2 Fe15 Co2纳米晶,而三步快速退火工艺则易于诱导出(200)织构的FeCo纳米晶.实验结果表明,基底加热薄膜中析出的Nd2 Fe17纳米晶与Nd6 Fe13 Si界面硅化物的热膨胀特性正好相反,由此产生的残余内应力与磁弹各向异性,是导致基底加热薄膜PMA反常增强的主要原因.
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