利用计算机模拟仿真技术对适用于生长18英寸直拉单晶硅的40英寸热场在水平磁场下的生长工艺进行三维模拟仿真计算,重点分析了不同强度水平磁场作用下熔体和晶体中的温度场分布、熔体中流场的变化及其对晶体生长固/液界面形状的影响及其变化规律,并进一步研究了不同水平磁场强度对熔体和晶体中氧杂质含量分布影响.数值模拟计算结果表明:由于外加水平磁场的引入,熔体的流动呈现完全的三维、非对称特点,从而导致熔体内的温度场、氧杂质的分布呈现明显的三维非对称特性;水平磁场强烈影响固/液生长界面下熔体的流动特性,从而显著影响熔体的固/液生长界面形状及氧杂质传输过程.
Three-dimensional numerical simulations on Czochralski 18-inch silicon ingot growth process were performed taking into account horizontal magnetic field with different strengths.Particular attention was paid to influences of horizontal magnetic field with various strengths on the meh/crystal interface shape,the temperature distribution and flow pattern in the silicon melt.The oxygen concentration in the silicon melt and solid crystal were further investigated as well.The numerical simulation results showed that both the temperature field and oxygen distribution in the silicon melt exhibited the fully three-dimensional asymmetric feature due to three dimensional asymmetric characteristic of melt flow under horizontal magnetic field.Meanwhile,the strength of horizontal magnetic field strongly affected the flow pattern and flow characteristic in the silicon melt,particularly beneath the melt/crystal growth interface,and accordingly changed the melt/crystal interface shape and oxygen transport process from the silicon melt to the growing crystal substantially.
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