为了研究金属基复合材料在剧烈塑性变形(SPD)过程中增强颗粒与金属基体的界面连接机制,通过等径角挤扭(ECAP-T)工艺在较低温度下制备块状10wt％ SiCP/Al基复合材料,并对经过1、2和4道次ECAP-T变形的SiC颗粒与纯Al之间的界面反应以及元素扩散进行了研究.通过TEM和XPS研究了界面和元素扩散,结果表明:即使在较低的外界制备温度下,Al和SiC颗粒表面的SiO2层也能够发生反应,形成主要由Al2O3组成的界面层.相比理论计算值,ECAP-T变形可以将Al的扩散系数提高约1016倍,增强扩散的原因主要是ECAP-T变形促使界面温度升高,且在铝基体内产生空位、位错和晶界等高密度晶格缺陷.
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