Eu2+/Tb3+掺杂的Sr2Si5N8基荧光粉的制备与发光性能

无机材料学报, 2015, (4): 397-400. doi: 10.15541/jim20140374

Eu2+/Tb3+掺杂的Sr2Si5N8基荧光粉的制备与发光性能

彭霞 ^1, , 李淑星 ^2, , 刘学建 ^3, , 黄毅华 ^4, , 黄政仁 ^5, , 李会利 ^6,

1.中国科学院上海硅酸盐研究所，高性能陶瓷和超微结构国家重点实验室，上海200050; 中国科学院大学，北京100049

2.中国科学院上海硅酸盐研究所，高性能陶瓷和超微结构国家重点实验室，上海200050; 中国科学院大学，北京100049

3.中国科学院上海硅酸盐研究所，高性能陶瓷和超微结构国家重点实验室，上海200050

4.中国科学院上海硅酸盐研究所，高性能陶瓷和超微结构国家重点实验室，上海200050

5.中国科学院上海硅酸盐研究所，高性能陶瓷和超微结构国家重点实验室，上海200050

6.华东师范大学物理系,上海,200062

基金项目: 上海市自然科学基金(12ZR1451900) National Natural Science Foundation of China(551172263,51472087) 国家自然科学基金(51172263,51472087) Shang hai Municipal Natural Science Foundation(12ZR1451900)

关键词：碱土金属氮硅化物 , 碳热还原氮化法 , 发光性能 , 能量传递

Syntheses and Photoluminescence Properties of Eu2+/Tb3+Doped Sr2Si5N8 Phosphors

Keywords： alkaline-earth-silicon-nitrides , carbothermal reduction and nitridation method , luminescence , energy transfer

采用碳热还原氮化法合成了Eu2+/Tb3+掺杂的Sr2Si5N8基荧光粉，并重点研究了Tb3+-Eu2+共掺时Sr2Si5N8基荧光粉的发光性能。研究结果表明：由于Tb3+的f→d间的跃迁是自旋允许的， Sr2Si5N8：Tb3+在330 nm激发光下，在490、543、585和623 nm四处各有一发射峰，它们分别来源于Tb3+的5D4→7Fj (j=6、5、4、3)能级跃迁；掺入Tb3+对Sr1.96Si5N8：0.04Eu2+的激发谱和发射谱的形状及峰位无明显影响，当共掺离子Tb3+浓度为x =0.01时，样品发射强度比未共掺的Sr1.96Si5N8：0.04Eu2+提高了约20%， Tb3+主要通过电多极能量传递的方式转向Eu2+。

Eu2+/Tb3+ doped Sr2Si5N8 phosphors were prepared by carbothermal reduction and nitridation method. The luminescence of Tb3+/Eu2+co-doped Sr2Si5N8 were investigated. The experimental results indicated that owing to spin-allowed f→d transition rule the four emission lines located at 490, 543, 585, and 623 nm which ascribed to the 5D4→7Fj (j = 6, 5, 4, 3) transitions were observed under 330 nm excitation. No obvious changes in spectral line shape were observed for Sr2Si5N8:Eu2+ co-doped with Tb3+. However, the emission intensity was improved by about 20%with Tb3+doping concentration of x=0.01 mainly because of the electric multipole energy transfer from Tb3+to Eu2+.

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