采用电弧炉熔炼、球磨、放电等离子烧结的方法合成了系列第 I 类笼状化合物 Ba8Ga15XSi30(X=Ga、Zn、Cu)。研究了Zn、Cu对Ga的替代对材料结构以及热电性能的影响。结果表明,相比于Ba8Ga16Si30, Zn、Cu的掺杂使得样品的晶格常数减小,热导率降低, Seebeck系数的绝对值增大,ZT值有明显的升高。
A series of Ba8Ga15XSi30 (X=Ga、Zn、Cu) clathrate samples were prepared by combining arc melting, ball milling and spark plasma sintering (SPS) techniques. The crystal structure and thermoelectric properties of all samples were studied. Compared with Ba8Ga16Si30, the lattice constanta decreases as one Ga is replaced by Zn or Cu. What’s more, thermal conductivity decreases and magnitude of Seebeck coefficient increases with Zn or Cu doping. Consequently, thermoelectric figure of meritZT increases significantly.
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