通过改变氢气对硅烷的稀释比 R, 采用等离子体增强化学气相沉积(PECVD)方法制备出具有非晶/微晶相变过渡区的氢化硅薄膜, 并研究了所得硅膜在不同沉积阶段的微观结构和形貌、晶化效果和电学性能.研究结果表明,当 R=10 时, 样品呈典型的非晶特性; 随着氢稀释比的增大, 薄膜表现出两相结构, 且衬底表面处的非晶过渡层逐渐减薄, 也即非晶向微晶的转变提前.但XRD结果显示, 硅膜的晶化率和平均晶粒尺寸随着R的增加呈先增后减的趋势, 在R=28.6时达到最大值.另外, 暗电导率和载流子浓度表现出了与晶化率一样的变化趋势, 显示出硅膜的电学性能与微观结构的高度正相关性.
Hydrogenated silicon thin films with two-phase structure were prepared by plasma enhanced chemical va-por deposition (PECVD) at different hydrogen dilution ratios (R) and their microstructure and electrical properties were investigated. The results indicated that the film was amorphous whenR was 10. AsR increased, the film pre-sented two-phase structure, and the thickness of the amorphous layer tended to thin and the transition to crystalline from amorphous started earlier. From XRD results, both crystallinity and average grain size of the films increased firstly and then decreased with increase ofR, and at maximum values whenR was 28.6. The change rule of dark con-ductivity and carrier density agreed with the change rule of crystallinity and average grain size, which showed a close positive relationship between electrical properties and the microstructure.
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