采用连续离子层吸附反应法(SILAR)在TiO2/FTO电极上沉积SnS,组装结构为FTO/TiO2/SnS/P3HT:PCBM/Ag的多层异质结太阳能电池,结果显示:SnS掺杂能显著提高P3HT/PCBM体系太阳能电池的光电转化性能.通过SEM观察、UV-Vis光谱、J-V曲线、Raman光谱以及射频辉光放电光谱仪(GD-OES)等手段,系统研究了不同前驱体液浓度制备的SnS对电池的影响,发现当n(Sn2+):n(S2-)为1:1.5时,电池的光电转化效率最高,达到0.369%,其开路电压、短路电流和填充因子分别达到0.373 V、1.92 mA/cm2和51.2%.另外,GD-OES谱图显示前驱体溶液中Sn2+/S2-比例对于SnSx层的化学组成及沉淀量具有重要影响,从而导致复合太阳能电池光电性能的显著变化.
SnS was deposited on the surface of FTO/TiO2 electrodes with different molar concentration ratio of Sn2+ and S2- using successive ionic layer absorption and reaction (SILAR) method. Afterwards, the as-prepared TiO2/SnS compos-ite electrode was assembled into a multilayer heterojunction solar cell with an architecture of FTO/TiO2/SnS/ P3HT:PCBM/Ag. The TiO2/SnS composite films were characterized by scanning electron microscopy (SEM), Raman spectra analysis and Glow discharge optical emission spectrometer (GD-OES). The photovoltaic performance of solar cells were determined using UV-Vis spectra and I-V curves. Results showed that incorporation of SnS significantly im-proved the short-circuit current of the multilayer heterojunction solar cells. Meanwhile, the dependence of the photo-voltaic performance of solar cells on the molar concentration ratio of Sn2+/S2- was investigated systematically. During the SILAR processes, a series of electrodes were prepared in the precusor solutions with different Sn2+/S2- molar concentra-tion ratios (n(Sn2+):n(S2-)= 1:1, 1:1.25, 1:1.5, 1:1.75 and 1:2). Moreover, GD-OES method distinguished the effects of Sn2+/S2- ratio on the SnSx layer deposition. It was found that the Sn2+/S2- ratio of SILAR precursors, dominated by thick-ness and chemical composition of SnSx, affected photovoltaic performance of the solar cells significantly.I-V test results testified that the ratio of Sn2+/S2- molar concentration was optimized at 1:1.5, which resulted in the highest photoelectric conversion efficiency. The open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), and power conver-sion efficiency (PCE) reached 0.373 V, 1.92 mA/cm2, 51.2%, and 0.369%, respectively.
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