采用高温固相法制备得到Sr2MgSi2O7∶ Eu2+和Sr2MgSi2O7∶ Eu2+,Dy3+发光粉,并详细研究了Eu2+和Dy3+的掺杂浓度对Sr2MgSi2O7材料的荧光和长余辉性能的影响.所有样品都在470 nm附近呈现较宽的发光峰,这可归因于Eu2+离子的4f65d→4f7电子能级跃迁.当Eu2+掺杂浓度超过淬灭浓度,其浓度淬灭效应导致发光粉的荧光强度下降和余辉时间减短.同时,发射峰的峰位随Eu2+浓度的增加而发生红移,这主要由于晶体场分裂能和斯托克斯位移变化造成的,而电子云扩大效应变化所产生的影响相对较弱.Dy3+离子会抑制荧光,但有助于延长余辉时间.当其掺杂浓度超过10mol%时,Eu2+\Dy3+离子通过隧道复合机制发生浓度淬灭,从而使材料的长余辉寿命减少.
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