通过在含有钆、镓、铝离子的硝酸混合溶液中滴加氨水,共沉淀生成Ce掺杂的Gd3(Al,Ga)5O12(GAGG)前驱体,并采用TG/DTA对GAGG前驱体进行表征.分别在800℃、850℃、900℃、1000℃、1 100℃及1200℃对GAGG前驱体进行煅烧处理,采用XRD对GAGG粉体的物相进行表征,结果显示制备出纯相的GAGG粉体.采用SEM对GAGG粉体的颗粒大小以及微观形貌进行观察.GAGG粉体的荧光谱图显示在560 nm处有一个很强的发射峰.在900℃煅烧处理的GAGG粉体所烧结的陶瓷具有最高的透明度.
参考文献
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