分别采用超声微波溶剂热法、常压溶剂热法及高压溶剂热法制备In2Se3/CuSe粉体,研究不同方法制备In2Se3/CuSe粉体的物相、形貌,并利用涂覆-快速热处理法制作薄膜太阳电池吸收层.通过XRD、Raman、FESEM和TEM对样品的物相、形貌和组成进行了表征.结果表明:超声微波溶剂热法和常压溶剂热法得到的产物是以In2Se3+CuSe混合相的形式存在,高压溶剂热法合成的In2Se3/CuSe粉体则呈核壳结构,(以In2Se3为核,CuSe为壳).涂覆-快速热处理法制备CIS薄膜的FESEM照片结果表明,高压溶剂热法合成的In2Se3/CuSe更容易获得平整致密的薄膜.将该CIS薄膜直接用于电池器件的组装,获得的光电性能参数:Voc为50 mV,Jsc为8 mA/cm2.
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