采用溶胶-凝胶法,在甲基化改性SiO2溶胶中掺杂PdCl2,制备Pd/SiO2有机-无机薄膜.通过XRD、红外光谱、TG-DTG分析、接触角以及SEM测试,考察该样品在N2气氛中的热稳定性.结果表明,Pd/SiO2膜材料经200℃以上温度焙烧后,样品中即出现了少量纳米金属Pd粒子,这些金属Pd为PdCl2还原所得.随着焙烧温度的升高,金属Pd粒子的衍射峰强度增加,膜材料中的Si-CH3吸收峰和Si-OH吸收峰减弱.样品中的Si-CH3吸收峰在750℃时完全消失.金属Pd的掺杂对SiO2膜材料的化学结构基本没影响.保持Pd/SiO2有机-无机薄膜及分离膜疏水性的最适宜焙烧温度为350℃.
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