通过NH4+离子交换的方法获得了HMFI分子筛膜,采用在线化学气相沉积法(CVD)对其进行晶内孔道修饰,以提高其对H2的分离选择性.实验考察了四乙氧基硅烷(TEOS)、甲基二乙氧基硅烷(MDES)和三甲基乙氧基硅烷(TMES)3种不同尺寸修饰源对膜性能的影响.结果表明,尺寸较小的TMES更容易扩散进入分子筛膜的晶内孔道,从而获得了更优的H2/CO2分离性能,修饰后的膜在500℃下H2/CO2的分离因子可迭45.9,H2的渗透性为1.43×10-7 mol/(m2·s·Pa).同时,通过质谱(MS)分析了TMES在HMFI分子筛孔道中的裂解行为,探讨了硅烷修饰的的沉积机理.
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