目的：提高SiC单晶片的材料去除率,改善加工后的表面质量。方法进行研磨液试验,利用极差法得到研磨液的最优配比和研磨液成分中影响去除率的主次因素顺序；对主要影响因素进行单因素试验并考察对材料去除率的影响。结果研磨液的质量为50 g,最优配方为：助研剂、分散剂、增稠剂、润滑剂、磨料A、磨料B的质量分别为9,7,5,3,3,5 g,其余为调和剂,磨料A和磨料B的粒度均为W28。结论影响材料去除率的主要因素为磨料粒度,粒度越大,材料去除率越高。
ABSTRACT:Objective To increase the material removal rate of SiC single crystal wafer and improve the surface quality after pro-cessing. Methods Grinding fluid experiment was carried out,and the range method was used to get the optimal proportion of grind-ing fluid and the importance order of the influencing factors for the removal rate in the grinding fluid composition. Single factor tests were performed for the major influencing factors and their influences on the material removal rate were investigated. Results The weight of the grinding fluid was 50 g, and the optimal formula of the grinding fluid was:9 g grind assistant agent, 7 g dispersing a-gent, 5 g thickening agent, 3 g lubricant, 3 g abrasive A and 5 g abrasive B, the other components were all blending agents. The particle size of abrasive A and abrasive B was both W28. Conclusion The main factor affecting the material removal rate was the particle size of abrasive. The larger the size, the higher the material removal rate.
参考文献
| [1] | 李娟,陈秀芳,马德营,姜守振,李现祥,王丽,董捷,胡小波,徐现刚,王继扬,蒋民华.SiC单晶片的超精密加工[J].功能材料,2006(01):70-72. |
| [2] | AKIHISA KUBOTA;KEITA YAGI;JUNJI MURATA;HEIJI YASUI;SHIRO MIYAMOTO;HIDEYUKI HARA;YASUHISA SANO;KAZUTO YAMAUCHI .A Study on a Surface Preparation Method for Single-Crystal SiC Using an Fe Catalyst[J].Journal of Electronic Materials,2009(1):159-163. |
| [3] | LEE K S;LEE S H;KIM M.Surface Preparation of 6H-Silicon Carbide Substrates for Growth of High-quality SiC Ep layers[J].Materials Science Forum,2004(457/460):797-800. |
| [4] | SU Jian-xiu .Design of CMP Slurry in CMP SiC Crystal Sub-strate(0001)Si Surface Based on Alumina(Al2O3)Abra-sive[J].Advanced Materials Research,2013,703:90-93. |
| [5] | 李淑娟,胡海明,李言,高新勤.SiC单晶片研磨机理及试验[J].人工晶体学报,2013(10):2065-2070,2075. |
| [6] | SU J X .Study on Lubricating Behavior in Chemical Me-chanical Polishing[J].Key Engineering Materials,2011,487:243-247. |
| [7] | 熊伟,储向峰,白林山,董永平,叶明富.GaN基LED衬底材料化学机械抛光研究进展[J].表面技术,2014(01):125-130. |
| [8] | 彭进,夏琳,邹文俊.化学机械抛光液的发展现状与研究方向[J].表面技术,2012(04):95-98. |
| [9] | 王吉翠,邓乾发,周兆忠,李振,袁巨龙.蓝宝石晶片机械化学研磨抛光新方法研究[J].表面技术,2011(05):101-103. |
| [10] | 徐进,雒建斌,路新春,张朝辉,潘国顺.超精密表面抛光材料去除机理研究进展[J].科学通报,2004(17):1700-1705. |
| [11] | ZHANG Yin-xia .Study on Subsurface Damage Model of the Ground Monocry Stallinge Silicon Wafers[J].Key Engi-neering Material,2009,416:66-70. |
| [12] | 赵永武,刘家浚.半导体芯片化学机械抛光过程中材料去除机理研究进展[J].摩擦学学报,2004(03):283-287. |
| [13] | 刘幸龙 .固结磨料研磨SiC晶体基片研究[D].郑州:河南工业大学,2013. |
| [14] | 陈魁.试验设计与分析[M].北京:清华大学出版社,2005 |
| [15] | 刘瑞江,张业旺,闻崇炜,汤建.正交试验设计和分析方法研究[J].实验技术与管理,2010(09):52-55. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%