目的 验证介电泳抛光方法的有效性,研究电极形状对介电泳抛光方法均匀性、抛光效率和去除率的影响. 方法 选取直径76. 2 mm的单晶硅片为实验对象,进行传统化学机械抛光( CMP)实验和使用4种电极形状的介电泳抛光实验,每隔30 min测量硅片不同直径上的表面粗糙度以及硅片的质量,然后对测量的数据进行处理和分析. 结果 与传统CMP方法比较,使用介电泳抛光方法抛光的硅片,不同直径上的表面粗糙度相差小,粗糙度下降速度快,使用直径60 mm圆电极形状介电泳抛光时相差最小,粗糙度下降最快. 介电泳抛光方法去除率最低能提高11 . 0%,最高能提高19 . 5%,最高时所用电极形状为内径70 mm、外径90 mm的圆环. 结论 介电泳抛光方法抛光均匀性、效率和去除率均优于传统CMP方法.
Objective To demonstrate the effectiveness of dielectrophoresis polishing method ( DPM) and the effect of the elec-trode shape on uniformity, efficiency and to investigate the removal rate. Methods The 76. 2 mm-diameter monocrystalline silicon wafer was polished by CMP and DPM. The surface roughness of different positions on wafer and quality of wafer were measured ev-ery 30 minutes. The measured values were processed and analyzed. Results Compared with CMP, the difference of surface rough-ness between different positions on wafer polished by DPM was less and the roughness decreased more quickly, and the difference was the least and the roughness decreased in the fastest speed when the circle electrode of 60 mm in diameter was used. The remo-val rate of DPM was enhanced by 11. 0% ~19. 5% when the annulus electrode of 70 mm in inner diameter and 90 mm in external diameter was used. Conclusion The uniformity, efficiency and removal rate of DPM were superior to CMP.
参考文献
| [1] | 袁礼华;许健;董旭坤.平面玻璃窗口片光学表面零级疵病抛光工艺研究[J].半导体光电,2013(2):251-254. |
| [2] | Liangyong Wang;Kailiang Zhang;Zhitang Song;Songlin Feng.Ceria concentration effect on chemical mechanical polishing of optical glass[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,200711(11):4951-4954. |
| [3] | M.M. Rashad;M.M. Hessien;E.A. Abdel-Aal.Transformation of silica fume into chemical mechanical polishing (CMP) nano-slurries for advanced semiconductor manufacturing[J].Powder Technology: An International Journal on the Science and Technology of Wet and Dry Particulate Systems,20111/3(1/3):149-154. |
| [4] | 杨洪星;吕菲;赵权;刘春香.砷化镓抛光片总厚度变化研究[J].半导体情报,2001(5):55-57. |
| [5] | 熊伟;储向峰;白林山;董永平;叶明富.GaN基LED衬底材料化学机械抛光研究进展[J].表面技术,2014(1):125-130. |
| [6] | John J. Gagliardi;Don Kim;Jennifer J. Sokol;Larry A. Zazzera;Vincent D. Romero;Matthew R. Atkinson;Faisal Nabulsi;Harry Zhang.A case for 2-body material removal in prime LED sapphire substrate lapping and polishing[J].Journal of manufacturing processes,20133(3):348-354. |
| [7] | 周兆忠;袁巨龙;文东辉.蓝宝石衬底的超光滑表面加工进展[J].航空精密制造技术,2009(3):8-13. |
| [8] | 王吉翠;邓乾发;周兆忠;李振;袁巨龙.蓝宝石晶片机械化学研磨抛光新方法研究[J].表面技术,2011(5):101-103. |
| [9] | 邹文兵;刘德福;胡庆;陈广林.阵列光纤组件端面的化学机械抛光试验研究[J].表面技术,2015(4):132-136,146. |
| [10] | 王娟;刘玉岭;张建新;舒行军.钽抛光及抛光机理的探究[J].半导体技术,2006(5):361-362,366. |
| [11] | 陈景;刘玉岭;王晓云;王立发;马振国;武亚红.镁合金抛光机理与CMP工艺研究[J].微纳电子技术,2008(2):114-117,122. |
| [12] | Ye,T.;Li,H.;Lam,K.Y..Motion, deformation and aggregation of two cells in a microchannel by dielectrophoresis[J].Electrophoresis: The Official Journal of the International Electrophoresis Society,201122(22):3147-3156. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%