目的：研究不同靶基距对高功率脉冲磁控溅射（HIPIMS）在凹槽表面制备钒膜微观结构和膜厚均匀性的影响，实现凹槽表面高膜层致密性和均匀性的钒膜制备。方法采用HIPIMS方法制备钒膜，在其他工艺参数不变的前提下，探讨不同靶基距对凹槽表面钒膜相结构、表面形貌及表面粗糙度、膜层厚度均匀性的影响。采用 XRD、AFM及 SEM 等观测钒膜的表面形貌及生长特征。结果随着靶基距的增加，V(111)晶面衍射峰强度逐渐降低。当靶基距为12 cm时，钒膜膜层表面粗糙度最小，为0.434 nm。相比直流磁控溅射（DCMS），采用HIPIMS制备的钒膜呈现出致密的膜层结构且柱状晶晶界不清晰。采用HIPIMS和DCMS方法制备钒膜时的沉积速率均随靶基距的增加而减少。当靶基距为8 cm时，采用HIPIMS方法在凹槽表面制备的钒膜均匀性最佳。结论采用HIPIMS方法凹槽表面钒膜生长的择优取向、表面形貌、沉积速率及膜厚均匀性均有影响。在相同的靶基距下，采用 HIPIMS 获得的钒膜膜厚均匀性优于DCMS方法。
ABSTRACT:Objective To investigate the influence of different target-substrate distance on the microstructure and thickness uniformity of vanadium films on the groove surface by high power impulse magnetron sputtering (HIPIMS), and prepare vana-dium films with high film density and uniformity on the surface of the groove.MethodsThe vanadium films were prepared by HIPIMS method. The influence of different target-substrate distance on the surface structure, surface morphology, surface roughness and uniformity of the film thickness was discussed with other technological parameters not changed. Surface mor-phology and growth characteristics of vanadium films were observed by XRD, AFM and SEM. ResultsWith the tar-get-substrate distance increasing, the peak intensities of V (111) decreased gradually. The minimum roughness was 0.434 nm which deposited at a target-substrate distance of 12 cm. The HIPIMS vanadium films clearly exhibited a denser structure and the columnar crystal boundary was not as clear as DCMS films. The deposition rate at different positions of concave object ob-viously decreased with the increase of target-substrate distance in HIPIMS and DCMS process. For HIPIMS, the best thickness uniformity was achieved at a target-substrate distance of 8 cm. ConclusionThe target-substrate distance has an obvious influ-ence on the preferred orientation, surface morphology, deposition rate and thickness uniformity of vanadium films on the groove surface by HIPIMS. At the same target-substrate distance, the HIPIMS thickness uniformity is better than that of DCMS.
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