目的 研究不同等离子体刻蚀工艺对基体和四面体非晶碳膜(ta-C)的影响,并进一步考察不同电弧等离子体刻蚀时间对ta-C薄膜结构的影响.方法 采用自主设计研制的45°单弯曲磁过滤阴极真空电弧镀膜设备,进行不同等离子体刻蚀以及ta-C薄膜的沉积.使用等离子体发射光谱仪表征离子种类及其密度,使用椭偏仪表征薄膜厚度,原子力显微镜表征刻蚀后的基体粗糙度,拉曼光谱仪和XPS表征薄膜结构,TEM分析薄膜的膜基界面结构.结果 辉光刻蚀工艺中,作用的等离子体离子以低密度的Ar离子为主;而电弧刻蚀时,作用的等离子体离子为高密度的Ar离子和少量的C离子,并且能够在基体表面形成约15 nm的界面层,并实现非晶碳膜(a-C)的预沉积.随电弧等离子体刻蚀时间增加,ta-C薄膜的sp3含量有所降低.结论 相比于辉光刻蚀,电弧刻蚀利于制备较厚的ta-C薄膜.这主要是因为电弧刻蚀时,基体表面形成良好的界面混合层,并预沉积了非晶碳膜,形成a-C/ta-C的梯度结构,有助于增强膜基结合力.
The work aims to study effects of different plasma etching processes on silicon substrate and tetrahedral amorphous carbon (ta-C) films, and further survey effects of different arc plasma etching time on ta-C films. Etching of different plasma and deposition of ta-C films were performed by a home-made 45o bend magnetic filtered cathodic vacuum arc (FCVA) coater. Plasma types and density were characterized with optical emission spectrometer (OES); thickness of ta-C films with el-lipsometer; roughness of treated substrates after etching with atomic force microscope (AFM); the film structure with Raman spectroscopy and XPS; and film-to-substrate interface structure was analyzed with TEM, representatively. The results showed that the Ar+ of low density dominated in the effective plasma of glow etching process while Ar+ of high density and a few C+ emerged in arc plasma etching process. After the arc plasma etching, a nearly 15 nm thick interface layer was formed on the substrates surface, and pre-deposition of amorphous carbon film (a-C) was observed. Moreover, sp3 content of the ta-C film de-creased as the arc etching time increased. Compared with glow etching process, arc etching facilitates the deposition of thicker ta-C films, primarily due to the formation of interfacial layer on the substrate surface and the pre-deposition of amorphous car-bon films layer in arc etching, which contributes to formation of a special a-C/ta-C gradient film structure and improvement of adhesion strength.
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