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目的 探索高功率脉冲磁控溅射方法在大尺寸平面磁控溅射Cr靶过程中,近基底表面等离子体区域内的活性粒子分布特性以及辐射跃迁过程,为HiPIMS的规模化应用提供实验基础和理论依据.方法 选择不同高功率脉冲溅射脉冲电压、工作气压和耦合直流等关键沉积参数,采用等离子体发射光谱仪测量近基底表面等离子体区域内的光学发射光谱,分析原子特征谱线的种类、强度分布、离子谱线强度百分比、金属原子谱线含量等.结果 当脉冲电压到达700 V后,基底表面的等离子体区域内的金属离化率显著提高;脉冲电压为600 V时,适当增加工作气压至5.0 mTorr,能有效提高到达基底的Cr激发态粒子含量,工作气压的升高会降低金属离化率.增加耦合直流在一定程度上降低了能到达基底的活性Cr+和Cr*原子含量,为了保持一定的活性粒子比例,耦合直流应当小于1.0 A.结论 大面积高功率脉冲磁控溅射中的近表面等离子体区域内的主要活性粒子为Ar+和Cr*激发态原子,其主导的碰撞过程为Ar+的电离复合过程和Cr*的退激发过程,金属离化率还有待提高.

The work aims to investigate the active particles distribution characteristics and radiative transition processes of near-substrate plasma region in large scale planar HiPIMS process for chromium target, so as to provide experimental basis and theoretical foundation for large-scale application of HiPIMS. Key deposition parameters including different pulse voltage, working air pressure and superimposed DC current in HiPIMS processes were selected. Plasma emission spectroscopy was uti-lized to measure optimal emission spectrum in near-substrate plasma region to analyze category of atomic characteristic spectral line, intensity distribution, ion line intensity percentage, metal atomic spectral line content, etc. The metal ionization rate in near-substrate plasma region increased significantly after the pulsed voltage exceeded 700 V; increasing working pressure to 5.0 mTorr at the pulsed voltage of 600 V could effectively improve content of excited state Cr particles arriving at the substrate. However, the increase of working air pressure would reduce the ionization rate of metal. The increase of superimposed DC cur-rent could decrease content of activated Cr+ and Cr* arriving at the substrate to a certain degree. The superimposed DC current-should be below 1.0 A to maintain certain proportion of activated particles. The activated particles in near-substrate plasma re-gion in HiPIMS are mainly excited Ar+ and Cr*atoms, leading collision processes are ionization recombination of Ar+ atoms and de-excitation of Cr* atoms. Metal ionization rate shall be improved.