以芳香长链二胺2，2-双（4-氨基苯氧基苯基）丙烷和3，3'，4，4'-联苯四甲酸二酐为原料，通过溶液缩聚法合成聚酰胺酸溶液，采用旋涂法将聚酰胺酸涂于ITO玻璃上，经亚胺化获得一种联苯型聚酰亚胺薄膜作为功能层，制备出一种有机阻变存储器。对该联苯型聚酰亚胺进行结构表征并研究其热稳定性，采用伏安特性分析仪研究有机阻变存储器的阻变存储性能。结果表明：合成的联苯型聚酰亚胺具有良好的热稳定性；制备的有机阻变存储器具有良好的阻变性能及耐疲劳性能。
A polyamide acid was synthesized with long-chain aromatic diamine 2,2-bis(4-aminophenoxy phenyl)propane and 3,3',4,4'-biphenyltetracarboxylic acid dianhydride via solution condensation polymeriza-tion. The polyamide acid was coated on the indium-tin-oxide glass (ITO) by spin coating method, and a biphenyl polyimide (PI) film was prepared through imidization, and then an organic resistive random access memory was fabricated using the PI film as functional layer. The structure and thermal stability of the biphenyl polyimide was studied, and the memory storage performance of the organic resistive random access memory was studied by volt-ampere characteristic analyzer. The results show that the biphenyl PI has good thermal stability. The fabricated resistive random access memory has good resistive switching characteristics and fatigue resistance.
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