采用原位聚合法制备了三明治结构的SiO2纳米掺杂聚酰亚胺(PI)复合薄膜SiO2-PI/PI/SiO2-PI.利用透射电镜(TEM)、X-射线衍射(XRD)、扫描电镜(SEM)表征SiO2纳米颗粒的分散状态及三层复合薄膜的断面结构,研究三层结构复合薄膜的介电性能、电导率、耐电晕性能和电气强度等电学性能.结果表明:SiO2纳米颗粒可均匀地分散于聚酰亚胺基体中,三层复合薄膜具有清晰的界面分层;当SiO2纳米颗粒掺杂量为20%时,三层复合薄膜的耐电晕老化时间最长,分别为纯PI和单层PI/SiO2复合薄膜的26倍和2倍;当SiO2纳米颗粒掺杂量为15%时,三层复合薄膜的电气强度达到最大值(280.6 kV/mm).
A kind of sandwich-structured polyimide/SiO2 composite film (SiO2-PI/PI/SiO2-PI) was prepared by in-situ polymerization method. The dispersion of SiO2 nanoparticles and the cross-section structure of the composite film were studied via TEM, XRD, and SEM. Meanwhile, the dielectric property, conductivi-ty, corona resistance, and electric strength of the sandwich-structured composite film were analyzed. The results show that the SiO2 nanoparticle could well disperse in the PI matrix, and there is clear interface between layers in the sandwich-structured composite film. When the doping content of SiO2 nanoparticle is 20%, the sandwich-structured composite film has the longest corona resistant ageing time, which is 26 times and twice longer than that of the pure PI film and monolayer PI/SiO2 composite film respectively. When the doping content of SiO2 nanoparticle is 15%, the electric strength of the sandwich-structured composite film reaches the maximum value (280.6 kV/mm).
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