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根据反演法获得的对势和EAM多体势计算了纯Al位错发射的临界应力强度因子KIe以及Griffith裂纹解理扩展的临界应力强度因子KIG.结果表明,用对势算出的值和断裂力学计算结果更相近.因此,用对势来研究吸附的影响是可行的分子动力学模拟表明,Ga吸附在裂纹表面将使KIG=0.42 MPa·/ 降至KIG=0.32 MPa·/ m,这表明吸附使表面能γ降至γ*(=0.58γ).Ga吸附使KIe=0.31 MPa·/ 降至KIe=0.24 MPa/ ;Ga吸附使位错运动的临界分切应力从Tc=2.05MPa降至Tc=1.82 MPa.这就表明,Ga吸附后能降低Al的表面能,从而促进位错发射和运动.

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