以β-SiC粉加入少量作为晶种的α-SiC为起始原料,通过高温热处理过程中的相变和长柱状晶粒生长来制备原位增韧SiC基复相陶瓷;调整埋烧工艺控制高温热处理过程中液相挥发和保持稳定的化学计量比,以保证液相全部晶化为YAG相,着重解决了长柱状晶粒生长过程中的致密化.发现在完全形成紧密的网络状结构之前,长柱状晶粒的形成可能延缓致密化速率,但不会由此中止致密化过程.通过调整热处理条件,制备得到了完全致密化(>99%理论密度)并具有优异断裂韧性(K1c=6.9MPa.m1/2,SEPB法)的原位增韧SiC-YAG复相陶瓷.
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