研究了反应气体流量对磁控反应溅射NiCrOx薄膜成分和光学常数的影响. 在反应溅射过程中，NiCr靶随着O2流量的增大出现毒化现象. 在不同氧流量条件下可沉积出近于透明的介电薄膜和不透明的吸收薄膜. 对薄膜光学常数的研究可应用到太阳能光谱选择性吸收薄膜的制备.
The influence of mass flow of reactive gas on the composition and optical constants of deposited NiCrOx thin films was investigated. The results obtained show that NiCr target exhibits a poisoning phenomenon as O2 flow rate increased to a certain value during the reactive sputtering process. It is possible to deposit near transparent, dielectric thin films as well as the non-transparent, absorbing thin films. The study of optical constants of the thin films deposited at different
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