分析了无压烧结、热压烧结及SPS烧结过程中晶粒生长的行为及表观活化能.结果表明:在11001300C之间,纳米Y-TZP材料在以上几种烧结条件下的晶粒生长行为不同.无压烧结时晶粒生长较慢,而热压烧结和SPS烧结时晶粒生长较快.对晶粒生长的活化能分析可在一定程度上解释以上现象.分析结果显示:无压烧结的表观活化能为281kJ/mol.与纳米Y-TZP材料的晶界扩散活化能相近;热压烧结过程中,由于外压对扩散的促进作用,活化能比无压烧结时略有降低;在SPS烧结过程中,由于外加的脉冲电流能使晶粒表面大大活化,所以活化能与无压烧结相比大幅度下降.
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