铁电钛酸锶钡(BaxSr1-xTiO3)是一种拥有十分优越铁电/介电性能的材料,在可调谐微波器件及动态存储器件方面具有很好的应用前景.本文概括介绍了BaxSr 1-xTiO3薄膜的研究意义、基本结构、制备方法、各种性能特征及其表征方法与应用展望;并对当前BaxSr1-xTiO3薄膜研究中的几个重要前沿问题进行了详细讨论.
参考文献
| [1] | Boikov Y A, Claeson T. J. Appl. Phys., 1997, 81 (7): 3232-3236. |
| [2] | Dalberth M J, Stauber R E, Price J C, et al. Appl. Phys. Lett., 1998, 72 (4): 507-509. |
| [3] | Jia Q X, Findikoglu A T, Reagor D, et al. Appl. Phys. Lett., 1998, 73 (7): 897-899. |
| [4] | Horikawa Tsuyoshi, Mikami Noboru, Makita Tetsuro, et al. Jpn. J. Appl. Phys., Part 1, 1993, 32:4126-4130. |
| [5] | Kingon Angus I, Maria Jon-Paul, Streiffer S K. NATURE, 2000, 406: 1032-1038. |
| [6] | Park Soon Oh, Hwang Cheol Seong, et al. Jpn. J. Appl. Phys., Part 1, 1996, 35: 1548-1552. |
| [7] | Yoon S G, Lee J C, Safari A. Integrated Ferroelectrics, 1995, 7 (1-4): 329-339. |
| [8] | Chen C L, Shen J, Miranda F A, et al. Appl. Phys. Lett., 2001, 78 (5): 652-654. |
| [9] | Lippmaa M, Nakagawa N, Ohashi S, et al. Appl. Phys. Lett., 1999, 74 (23): 3543-3545. |
| [10] | Xi X X, Li H C, Geerk J, et al. Physica C, 1988, 153: 794-798. |
| [11] | Gao Y, Tran T, Alluri P. Appl. Phys. Lett., 1999, 75 (3): 415-417. |
| [12] | Gao Y, He S, Alluri P, et al. J. Appl. phys., 2000, 87 (1): 124-132. |
| [13] | Cheng Jian-Gong, Tang Jun, Meng Xiang-Jian, et al. J. Am. Ceram. Soc., 2001, 84 (7): 1421-1424. |
| [14] | Chen C L, Feng H H, Zhang Z, et al. Appl. Phys. Lett., 1999, 75 (3): 412-414. |
| [15] | Cole M W, Hubbard C, Ngo E, et al. J. Appl. Phys., 2002, 92 (1): 475-483. |
| [16] | Jeon Young-Ah, Choi Eun-Suck, Seo Tae-Suck, et al. Appl. Phys. Lett., 2001, 79 (7): 1012-1014. |
| [17] | Carlson C M, Rivkin T V, Parilla P A, et al. Appl. Phys. Lett., 2000, 76 (14): 1920-1922. |
| [18] | Baumert B A, Chang L H, Matsuda A T, et al. J. Appl. Phys., 1997, 82 (5): 2558-2566. |
| [19] | Kuroiwa T, Tsunemine Y, Horikawa T, et al. Jpn. J. Appl. Phys., Part 1, 1994, 33: 5187-5191. |
| [20] | Park J H, Kim B K, Park J G, et al. Ferroeletrics, 1999, 230 (1-4): 453-458. |
| [21] | Dietz G W, Schumacher M, Waser R, et al. J. Appl. Phys., 1997, 82 (5): 2359-2364. |
| [22] | Chang W, Horwitz J S, Carter A C, et al. Appl. Phys. Lett., 1999, 74 (7): 1033-1035. |
| [23] | Kim Boum-Seock, Oh Se-Hoon, Son Seung-Young, et al. J. Appl. Phys., 2000, 87 (9): 4425-4429. |
| [24] | Sinnamon L J, Bowman R M, Gregg J M. Appl. Phys. Lett., 2001, 78 (12): 1724-1726. |
| [25] | McNeal Mark P, Jang Sei-Joo, Newnham Robert E. J. Appl. Phys., 1998, 83 (6): 3288-3297. |
| [26] | Sirenko A A, Akimov I A, Fox J R, et al. Phys. Rev. Lett., 1999, 82 (22): 4500-4503. |
| [27] | Amanuma K, Mori T, Hase T, et al. Jpn. J. Appl. Phys., Part 1, 1993, 32: 4150-4153. |
| [28] | Lee Byoung Taek, Hwang Cheol Seong. Appl. Phys. Lett., 2000, 77 (1): 124-126. |
| [29] | Vendik O G, Zubko S P, Ter-Martirosayn L T. Appl. Phys. Lett., 1998, 73 (1): 37-39. |
| [30] | Hwang C S, Lee B T, Kang C S, et al. J. Appl. Phys., 1999, 85 (1): 287-295. |
| [31] | Hieda K, Eguchi K, Fukushima N, et al. Proceedings of International Electron Devices Meeting(IEEE,New York, 1998). 807. |
| [32] | Hwang Cheol Seong. J. Appl. Phys., 2002, 92 (1): 432-437. |
| [33] | Joshi P C, Ramanathan S, Desu S B, et al. Integrated Ferroelectrics, 1998, 19: 141-148. |
| [34] | YOON Ki Hyun, LEE Jae Chan, PARK Jihoon, et al. Jpn. J. Appl. Phys., Part 1, 2001, 40:5497-5500. |
| [35] | JEON Young-Ah, SEO Tae-Suck, YOON Soon-Gil. Jpn. J. Appl. Phys., Part 1, 2001, 40 (11):6496-6500. |
| [36] | Jia Q X, Park B H, Gibbons B J, et al. Appl. Phys. Lett., 2002, 81 (1): 114-116. |
| [37] | Streiffer S K, Basceri C, Parker C B, et al. J. Appl. Phys., 1999, 86 (8): 4565-4575. |
| [38] | Ban Z G, Alpay S P. J. Appl. Phys., 2002, 91 (11): 9288-9296. |
| [39] | Rivkin T V, Carlson C M, Parilla P A, et al. Integrated Ferroelectrics, 2000, 29: 215-223. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%