薄膜制备工艺的发展使铁电薄膜很好的应用于MEMS,使两者集成成为可能.本文将详细论述铁电薄膜的优良性能,及其与MEMS集成的关键工艺-图形化.最后,举例论述了PZT铁电薄膜在MEMS中的应用.
参考文献
[1] | Bryzek J, Petersen K, McCulley W. IEEE Spectrum, 1994. 20-31. |
[2] | Whatmore R W. Ferroelectrics, 1998, 225: 179-192. |
[3] | Whatmore R W, Watton R. Pyroelectric materials and devices, Infrared detectors and emitters: materials and devices (ISDN 0-7923-7206-9). London: Chapman & Hall, 2000. 99-148. |
[4] | Su Q-X, Kirby P, Komuro E, et al. IEEE Trans, 2001, 49 (4): 769-78. |
[5] | Cross L E, Trolier-McKinstry S. Encl. Appl. Phys, 1997, 21: 429. |
[6] | Polla D L, Francis L F. MRS Bull, Jrm 1996, 21 (7): 59-65. |
[7] | Kim J H, Wang L, Zurn S M, et al. Integ. Ferroelec, 1997, 15: 325-332. |
[8] | Lee C, Itoh T, Suga T. IEEE Trans. Ultrason. Ferroelec. Freq. Contr., 1996, 43: 553-559. |
[9] | Bernstein J J, Finberg S L, Houston K, et al. IEEE Trans. Ultrason. Ferroelec. Freq. Contr., 1997, 44:960-969. |
[10] | Flynn A M, Tavrow L S, Bart S F, et al. Micro-electromech. Syst., 1992, 1: 47-51. |
[11] | Hanson Cm, Beretan H R, Belcher J F, et al. Proc SPIE, 1998, 3379: 60. |
[12] | Whatmore R W, Zhang Q, Huang Z, et al. Materials Science in Semiconductor Processing, 2003, 5: 65-76. |
[13] | Donohue P P, Todd M A, Anthony C J, et al. Integ Ferroceletrics, 2001, 41: 25-34. |
[14] | Xu Baomin, Cross Eric L, Bernstein Jonathan J. Thin Solid Films, 2000, 377-378: 712-718. |
[15] | Polla Dennis L. Microelectronic Engineering, 1995, 29: 51-58. |
[16] | Bernstein J J, Bottari J, Houston K, et al. IEEE Ultrasonics Symposium, 1999. 1145-1153. |
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