用PLD技术结合后期退火,在透明石英单晶(100)上制备了高取向的纯钙钛矿相KTN薄膜.对薄膜的光学、电学性能分析表明,薄膜铁电居里温度为15℃,矫顽场7.32kV/cm,剩余极化强度9.25μC/cm2,折射率在波长1.2μm处为1.776,厚度968nm,沉积速率约为0.027nm/脉冲.I-V特性表明,低电场强度下,I-V服从欧姆定律,高电场强度下,I-V服从平方关系,可用空间电荷限制电流(SCLC)模型解释.薄膜漏电流在0～5V内低于250μA/mm2,具有良好的电学性能,C-F测试表明,低频电容色散大,高频色散小,在室温10kHz时介电常数为12600.介电损耗tanδ为0.04.
参考文献
| [1] | Triebwasser S, Reisman A. Phys. Rev., 1959, 114: 63-68. |
| [2] | Stafsudd O M, Pines M Y. J. Opt. Soc. Am., 1972, 62: 1153-1155. |
| [3] | Orlowski R, Boatner L A, Kratzig E. Opt. Commun., 1980, 35: 45-48. |
| [4] | Scheel H J, Sommerauer J. J. Cryst. Growth, 1983, 62: 291-298. |
| [5] | 王龙海,王世敏,黄桂玉,等.压电与声光,1995,17(5):36-44. |
| [6] | 马卫东,王世敏,张端明,等.科学通报,1998,43(3):259-262. |
| [7] | Ma W D, Zhang D M, Wang X D, et al. Phys. Status Solidi A, , 1999, 176 (2): 985-990. |
| [8] | Zhang D M, Ma W D, Wang X D, et al. Proceedings of SPIE-the International Society for Optical Engineering,1999: 502-503. |
| [9] | 马卫东,张端明,王晓东,等.华中理工大学学报,1998,26(7):7-9. |
| [10] | Yilmaz S, Venkatesan T, Gerhard-Multhaupt R. Appl. Phys. Lett., 1991, 58 (22): 2479-2481. |
| [11] | Debely P E, Guntre P, Arend H. Am. Ceram. Soc. Bull., 1979, 58: 606-609. |
| [12] | 王晓东.硕士论文:用脉冲激光沉积法在透明石英单晶(100)基片上制备高取向KTN薄膜.华中理工大学物理系,1999. |
| [13] | Zhang D M, Guan L, Yu B M, et al. Chin. Phys. Lett., 2003, 20(2): 263-266. |
| [14] | Li Z H, Zhang D M, Yu B M, et al. Chin. Phys. Lett., 2002, 19(12): 1841-1843. |
| [15] | Zhang D M, Li Z H, Yu B M, et al. Sci. China Ser. A, 2001, 44 (11): 1485-1496. |
| [16] | 张端明,关丽,李智华,等.物理学报,2003,52(1):242-246. |
| [17] | 李智华,张端明,陈中军,等.物理学报,2001,50(10):1950-1955. |
| [18] | 张端明,李智华,黄明涛,等.物理学报,2001,50(5):914-920. |
| [19] | Wang S M, Zhao J H, Lu C J. Ferroelectrics, 1994, 154: 289-294. |
| [20] | Wang X D, Peng X F, Zhang D M. Sci. China Ser. G, 2005, 48 (1): 33-43. |
| [21] | 王世敏,赵建洪,王龙海,等(Wang S M,et al).无机材料学报(Journal ofInorganic Materials),1996,11(2):264-269. |
| [22] | 包定华,王世敏,固豪爽,等(Bao D H,et al).无机材料学报(Journal ofInorganic Materials),1995,10(1):32-36. |
| [23] | Singh R K. Phys. Rev. B, 1990, 41: 8843-8852. |
| [24] | 卢朝靖,王世敏,邝安详,等.科学通报,1994,39:855-858. |
| [25] | Newnham R E, Dayakumar K R. Chemical Processing of Advanced Materials. New York: West Wiley, 1992. |
| [26] | Sashital S R, Kvishnakumar S, Esener S. Appl. Phys. Lett., 1993, 62: 2917-2920. |
| [27] | 包定华,王世敏,顾豪爽,等.物理化学学报,1993,9(4):450-454. |
| [28] | Yogo T, Kikuta K. J. Am. Ceram. Soc., 1995, 78(5): 2175-2181. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%