利用喷雾热解法制备了p型铟锡氧化物透明导电薄膜.主要研究了铟含量和热处理温度对薄膜的晶体结构、导电类型和载流子浓度以及光吸收特性等的影响.结果表明,当In/Sn比较小时,薄膜为金红石结构的二氧化锡,导电类型为n型;当In/Sn比在0.06～0.25范围内且热处理温度T≥600℃时,薄膜仍为金红石结构,但导电类型转为p型的;当In/Sn比超过0.3时,薄膜中有立方相的In2Sn2O7-x生成,由于氧空位的存在,薄膜又转变为n型.因此要获得p型导电的铟锡氧化物薄膜,In/Sn比不宜过低,也不能过高.热处理温度对薄膜的导电类型也有影响,对于In/Sn=0.2的薄膜,温度低于550℃时薄膜为n型导电,但当热处理温度高于550℃时,由于In3+取代Sn4+,因此薄膜为p型导电.当热处理温度高于700℃时,薄膜中空穴浓度达到饱和数值为4×1018cm-3,与此同时,透射率在可见光范围内仍高达80%以上.
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