采用简单的化学镀方法,在相对低的温度下制备了具有核-壳结构的SiC-Ni纳米复合颗粒.XRD和TEM分析结果表明,纳米Ni晶吸附在SiC颗粒表面,可以形成一层连续且致密的Ni包覆层.基于化学镀和催化理论,初步分析了化学镀核壳结构形成机理.利用波导法研究了纳米SiC颗粒和复合颗粒在8~12GHz的微波介电特性.研究结果表明,复合颗粒的介电常数实部(ε′)和介电损耗角正切值(tanδ=ε"/ε′)都明显增强,并给出相应的理论模型.
参考文献
[1] | Che R C,Peng L M,Duan X F,et al.Adv.Mater.,2004,16:401-404. |
[2] | Wadhawan A,Garrett D,Perez J M.Appl.Phys.Lett.,2003,83:2683-2685. |
[3] | Wu Y H,Kong L B.Appl.Phys.Lett.,2004,84:4956-4958. |
[4] | Watts P C P,Ponnampalam D R,Hsu W K,et al.Chem.Phys.Lett.,2003,378:609-614. |
[5] | Gueorguiev G K,Pacheco J M,Tomanek D.Phys.Rev.Lett.,2004,92:215501-215505. |
[6] | Chen Y J,Cao M S,Wang T H,et al.Appl.Phys.Lett.,2004,84:3367-3369. |
[7] | Zhao D L,Zhao H S,Zhou W C.Physica E,2001,9:679-685. |
[8] | Imholt T J,Dyke C A,Hasslacher B,et al.Chem.Mater.,2003,15:3969-3794. |
[9] | Zhang B,Li J B,Sun J J,et al.J.Eur.Ceram.Soc.,2002,22:93-99. |
[10] | Microwave processing of ceramics-an overview.3rd edition,edited by W.H.Sutton,R.L.Beatty,M.F.Iskander and W.H.Sutton.Materials Research Society,San Francisco,1992. |
[11] | Morkoc H,Strite S,Guo G B.J.Appl.Phys.,1994,76:1363-1398. |
[12] | Krstic V D.Am J.Ceram.Soc.,1992,75:170-175. |
[13] | Bardal A.J.Mater.Sci.,1993,28 (10):2699-2703. |
[14] | Chen C K,Feng H M,Lin H C.Thin Solid Films.,2002,416:31-37. |
[15] | Hou Y C,Chen Y S,Amro N A,et al.Chem.Commun.,2000,12:1831-1832. |
[16] | Mizukoshi Y,Fujimoto T,Nagata Y,et al.J.Phys.Chem.,B 2000,104:6028-6032. |
[17] | Jang J S,Lim B K.Ange.Chem.Int.Edit.,2003,42:5600-5603. |
[18] | 张锐,王海龙,高濂,等(ZHANG Rui,et al).无机材料学报(Journal of Inorganic Materials),2005,20(2):294-498. |
[19] | 张锐,高濂,郭景坤(ZHANG Rui,et al).无机材料学报(Journal of Inorganic Materials),2003,18(3):575-579. |
[20] | 张巨先,侯耀永,高陇桥,等(ZHANG Ju-Xian,et al).硅酸盐学报(Journal of the Chinese Ceramic Society),1998,26(6):762-767. |
[21] | Chen Y J,Cao M S,Xu Q,et al.Surf.Coat.Tech.,2003,172:90-94. |
[22] | Grosiean A,Rezrazi M,Tachez M.Surf.Coat.Technol.,1997,96:300-304. |
[23] | Leon C,Rivera A,Varez A,et al.J.Phys.Rev.Lett.,2001,86:1279-1281. |
[24] | Rao Y,Qgitani S,Koh P,et al.Electronic Components and Technology Conference.2000.183-187. |
[25] | Shim J,Kim H T.Electro.Lett.,1998,34:1833-1834. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%