合成了新型的陶瓷先驱体混杂聚硼硅氮烷(H-PBSZ),分析了其结构,并采用TG-DTA,FT-IR、XRD以及SEM等分析手段对其裂解过程进行了研究.结果表明,H-PBSZ结构中含有B-N,Si-N、B-H、N-H,Si-H等化学键,随着裂解温度的升高,含氢键逐渐减少直至消失,最终得到BN和Si3N4的混合物.在裂解过程中,失重主要发生在100～400℃之间,陶瓷产率约为83wt%.裂解产物的结晶程度随着温度的升高逐渐增强,800℃的产物基本上为无定形态,微观形貌主要以球形颗粒为主; 1600℃的产物则已经晶化,可以观察到层片状结构的h-BN及少量的a-Si3N4晶粒.
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