以Ti(OC4H9)4水解形成的溶胶体系为模板,以AgNO3为银纳米线的前驱体,低温下合成长径比为50～60的银纳米线,采用TEM和XRD对所制得的银纳米线进行表征.以银纳米线作为导电胶的导电填料,成功制备了一种高电导率的各向同性导电胶.导电胶的电学性能和力学性能测试表明:这种导电胶在导电填料含量为56 wt%时的电导率比填充75 wt%微米银粒子的导电胶高约6倍(体积电阻率为1.2×10-4Ω·cm).由于填料含量的降低,该导电胶的抗剪切强度(以Al为基板时的抗剪切强度为17.6 MPa)相比于填充75 wt%微米银粒子和75 wt%纳米银粒子导电胶均有不同程度的提高.
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