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以聚硅氧烷类有机硅树脂YR3370(GE toshiba silicones)裂解生成的无定形SixOyCz陶瓷为基质,以0.8 μm SiC颗粒为非连续增强介质,制备了一种SiC/SixOyCz非连续增强陶瓷基复合材料.含SiC颗粒50%的素坯在99.99%N2气流中于1100~1300 ℃下保温1 h,所制备的陶瓷基复合材料密度可达2.27 g/cm3,维氏硬度可达741 kg/mm2.通过结构模拟和强度计算分析了SiC/SixOyCz陶瓷基复合材料的力学性能,其结构特点是连续的无定形SixOyCz陶瓷基质包围着分散的作为非连续增强介质的SiC颗粒,基质与增强介质之间具有合理的热匹配,并且可以改善单一陶瓷材料的脆性.

参考文献

[1] Bowman K J,El-Rahaiby S K,Richerson D W.Ceramic matrix composites[M]// Mallick P K,ed.Composites Engineering Handbook.New York:Marcel Dekker,Inc,1997:14-23.
[2] Colombo P,Riccardi B,Donato A,et al.Joining of SiC/SiCf ceramic matrix composites for fusion reactor blanket applications[J].Journal of Nuclear Materials,2000,278:127-135.
[3] Harshe R R.Synthesis and processing of amorphous Si(Al)OC bulk ceramics:High temperature properties and applications[D].Darmstadt:Darmstadt University of Technology,2004.
[4] Kim Y W,Kim S H,Xu X,et al.Fabrication of porous preceramic polymers using carbon dioxide[J].Journal of Materials Science Letters,2002,21:1667-1669.
[5] Radziszewski J G,Nimlos M R,Winter P R,et al.Infrared absorption spectroscopy of the phenyl radical[J].Journal of the American Chemical Society,1996,118:7400-7401.
[6] Schiavon M A,Radovanovic E,Yoshida I V P.Microstructural characterisation of monolithic ceramic matrix composites from polysiloxane and SiC powder[J].Powder Technology,2002,123:232-241.
[7] Lee Y B,Park H B,Shim J K,et al.Synthesis and characterization of polyamideimide-branched siloxane and its gas-separation[J].Journal of Applied Polymer Science,1999,74:965-973.
[8] McCann P,Somasundram K,Byrne S,et al.Conformal deposition of LPCVD TEOS[C]// Karam J M,Yasaitis J,eds.Proceeding of Micro-machining and Micro-fabrication Process Technology.San Francisco:SPIE,2001:329-340.
[9] Buczko R,Pennycook S J,Pantelides S T.Bonding arrangements at the Si-SiO2 and SiC-SiO2 interfaces and a possible origin of their contrasting properties[J].Physical Review Letters,2000,84(5):943-946.
[10] Wei Q,Pippel E,Woltersdorf J.Interfacial SiC formation in polysiloxane-derived Si-O-C ceramics[J].Materials Chemistry and Physics,2002,73:281-289.
[11] Renlund G M,Prochazka S.Silicon oxycarbide glasses Ⅱ:Structure and properties[J].Journal of Material Research,1991,6(12):2723-2734.
[12] Suri P,Heaney D F,German R M.Defect-free sintering of two material powder injection molded components[J].Journal of Materials Science,2003,38:1-7.
[13] Lewinsohn C A,Colombo P,Reimanis I,et al.Stresses occurring during joining of ceramics using preceramic polymers[J].Journal of the American Ceramic Society,2001,84(10):2240-2244.
[14] Jing Z,Ozer U,Mufit A.Green state joining of silicon carbide using polycarbosilane[J].Journal of the American Ceramic Society,2000,83(7):1687-1693.
[15] Frederic S,Frank L,Michel B,et al.Silicon carbide technology for submillimetre space based telescopes[C]// IAF,ed.Conference Proceeding Series of 48th International Astronautical Congress.Turin:AIAA,1997:1-10.
[16] Zheng J C,Wang H Q,Wee A T S,et al.Trends in bonding configuration at SiC/ⅢⅤ semiconductor interfaces[J].Applied Physics Letters,2001,79(11):1643-1645.
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