用电共沉积方法制备出4种InGaAs薄膜,用能谱析仪分析了薄膜成分,用分光光度计和单色仪测量薄膜的透射率结果表明,InxGa1-xAs薄膜为多晶结构,晶粒尺寸约为0.25μm,晶粒细致、均匀,其V-I特性是线性的,随着Ga含量的减少,发光波长增大.InGaAs薄膜的发射光波长为1.3～1.5μm.
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