采用初始化仪使非晶Ag11In12Te26Sb51薄膜结晶,利用差分扫描量热仪、X射线衍射和光学透过率的测量研究了非晶Ag11In12Te26Sb51薄膜的结晶行为.结果表明,非晶Ag11In12Te26Sb51膜的结晶温度约为210℃,熔化温度为481.7℃,结晶活化能Ea=2.07 eV/atom;Ag11In12Te26Sb51膜的结晶动力学遵循成核和生长机理;在激光致相变过程中可能出现的晶相有AgSbTe2、AgInTe2、Sb和Ag2Te等相;Ag11In12Te26Sb51薄膜的结晶程度受初始化功率和转速的影响.
参考文献
[1] | J.Feinleib, J.deNeufville, S.C.Moss, S.R.Ovshinsky, Appl. Phys. Lett., 18(6) 254(1971) |
[2] | V.Weidenhof, I.Friedrich, S.Ziegler, M.Wutting, J.AppI.Phys., 86(10), 5879(1999) |
[3] | Tae H. Jeong, Myong R. Kim, Hun Seo, Sang J. Kim, Sang Y. Kim, J.Appl. Phys., 86(2), 774(1999) |
[4] | Huang-Wen Chen, T.E.Hsieh, Jia-Reuy Liu, Hah-Ping D.Shieh, Jpn. J.Appl. Phys., 38(3B), 1691(1999) |
[5] | Junji Tominaga, Nobufumi Atoda, Jpn.J.Appl. Phys., 38(3B), L322(1999) |
[6] | M.Forst, T.Dekorsy, C.Trappe, M.Laurenzis, H.Kurz, Appl. Phys. Lett., 77(13), 1964(2000) |
[7] | Noboru Yamada, Toshiyuki Matsunaga, J.AppI.Phys., 88(12), 7020(2000) |
[8] | J.H.Coombs, A.P.J.M.Jongenelis, W.van Es-Spiekman, B.A.J.Jacobs, J.Appl. Phys., 78(8), 4918(1995) |
[9] | XIE Quan(谢泉),HOU Lisong(侯立松),GAN Fuxi(干福熹),RUAN Hao(阮昊),LI Jing(李晶),LI Jinyan(李进延),Chinese Journal of Materials Research(材料研究学报),14(5),501(2000) |
[10] | Hiroko Iwasaki, Makoto Harigaya, Osamu Nonoyama, Yoshiyuki Kageyama, Masaetsu Takahashi, Katsuyuki Yamada, Hiroshi Deguchi, Yukio Ide, Jpn.J.Appl. Phys., 32(11B), 5241(1993) |
[11] | Yem-Yeu Chang, Lih-Hsin Chou, Jpn. J.Appl. Phys., 39(4A), L294(.2000) |
[12] | Lih-Hsin Chou, Yem-Yeu Chang, Yeong-Cherng Chai, Shiunn-Yeong Wang, Jpn. J.Appl. Phys., 40(5A),3375(2001) |
[13] | LI Jinyan(李进延),HOU Lisong(侯立松),GAN Fuxi(干福熹),Chinese Journal of Materials Research(材料研究学报),15(5),553(2001) |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%