将[233]共面双滑移取向的铜单晶体在两种恒塑性应变幅下进行循环疲劳,形成密度不同的位错结构.用高密度脉冲电流对疲劳铜单晶体处理后,试样中位错的结构由单纯的脉络结构转化成位错胞状结构.高密度脉冲电流处理引起的热压应力不但加强了主滑移系位错的运动,还使共面次滑移系开动,在主滑移系位错和共面次滑移系位错的共同作用下导致位错胞状结构的形成.
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