用电子显微镜研究了压痕诱发砷化镓单晶中的塑性变形结果表明,在压痕周围除了产生玫瑰型分布的位错组态和二次对称的孪晶结构外,还形成了层错.层错有两种类型:一种由两个具有不同Burgers矢量的不全位错组成,另一种则由具有相同Burgers矢量的不全位错组成.
参考文献
| [1] | T.Suzuki, T.Yasutomi, T.Tokuoka, I.Yonenago, Plastic deformation of GaAs at low temperatures,Phil. Mag. A, 79, 2637(1999) |
| [2] | M.Tanaka, B.Jouffrey, Dissociated dislocations in GaAs observed in HREM, Phil.Mag. A, 50, 733(1984) |
| [3] | D.Gerthsen, F.A.Ponce, G.B.Anderson, High-resolution transmissione elecron microscopy of 60° dislocations in Si-GaAs, Phil. Mag. A, 59, 1045(1989) |
| [4] | P.Pirouz, Deformation mode in silicon, slip or twinning, Scripta Metall., 21, 1563(1987) |
| [5] | H.R.Hoche, J.Schreiber, Anitropic deformation behavior of GaAs, Phys.Stat.Solidi a, 86, 229(1984) |
| [6] | E.L.Bourhis, G.Patriarche, Transimission electron microscopy observations of low load indents in GaAs,Phil. Mag. Lett., 79, 805(1999) |
| [7] | P.B.Hirsch, P.Pirouz, S.G.Roberts, P.D.Warren, Indentation plasticity and polarity of hardness on {111}faces of GaAs, Phil. Mag. B, 52, 759(1985) |
| [8] | R.E.Hanneman, J.H.Westbrook, Effects of adsorption on the indentation deformation of non-metallic solids,Phil. Mag., 18, 73(1968) |
| [9] | P.D.Warren, P. Pirouz, G.Roberts, Simultaneous observation of α- and β-dislocation mevement and their effect on the fracture behavior of GaAs, Phil. Mag. A, 50, L23(1984) |
| [10] | A.Lefebvre, Y.Androussi, G.Vanderschaeve, A TEM investigation of the dislocation rosettes around Vickers indentation in GaAs, Phys. Stat.Solidi a, 99, 405(1987) |
| [11] | LI Zhicheng(李志成),Ph.D Dissertation,Institute of Metal Research,Chinese Academy of Sciences(2002) |
| [12] | X.J.Ning, T.Perez, P.Pirouz, Indentation-induced dislocations and microtwins in GaSb and GaAs,Phil. Mag. A, 72, 837(1995) |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%