应用扫描力显微镜(SFM)的压电响应模式观测未经抛光处理的PZT陶瓷片的电畴结构,用纵向压电响应信号和侧向压电响应信号获得PZT陶瓷材料三维电畴结构.结果表明,将样品晶粒的微形貌与SFM的纵向和侧向压电响应信号相结合,能准确表征粗大晶粒样品的三维电畴结构.用SFM可观测表面不经任何处理的陶瓷样品的电畴,不会引入表面应力等影响因素,能得到样品的原生畴结构.对原生畴结构的观察表明,对于受应力较大的晶粒,成畴的主要原因是降低应变能,而受应力较小的晶粒成畴的主要原因是降低退极化能.
参考文献
[1] | JFScott, CA Paz de Araujo, Science, 246(4935), 1400(1989) |
[2] | PBMiller, Phys Rev, 111, 736(1958) |
[3] | ASawoda, RAbe, Jpn J Appl Phys, 6,699(1967) |
[4] | JHatano, FSuda, Ferroelectrics, 20, 256(1978) |
[5] | RLBihan, MMaussion, Ferroelectrics, 7, 364(1973) |
[6] | KFranke, JBesold, WHaessler, CSeegebarth, Surf Sci Lett, 302(1/2), L283(1994) |
[7] | ALGruverman, OAuciello, JHatano, HTokumoto, Ferroelectrics, 184, 11(1996) |
[8] | CHAhn, TTybell, LAntognazza, KChar, RHHammond, MRBeasley, OFischer, J-MTriscone, Science,276(16), 1100(1997) |
[9] | ZXie, EZLuo, JBXu, IHWilson, HBPeng, LHZhao, BR Zhao, Appl Phys Lett, 76(14), 1923(2000) |
[10] | JAChristman, SHKim, HMaiwa, JPMaria, BJRodriguez, AIKingon, RJNemanich, J Appl Phys,87(11), 8031(2000) |
[11] | MAbplanalp, LMEng, P Gunter, Appl Phys, A66, S231(1998) |
[12] | CSGanpule, VNagarajan, BKHill, ALRoytburd, EDWilliams, RRamesh, J Appl Phys, 91(3), 1477(2002) |
[13] | KTetabe, STakekawa, MNakamura, KKitamum, Appl Phys Lett, 81(11), 2044(2002) |
[14] | OAuciello, AGruverman, HTokumoto, SAPrakash, SAPrakash, SAggarwal, R Ramesh, MRS Bulletin,23, 33(1998) |
[15] | P Guthner, KDransfeld, Appl Phys Lett, 61, 1137(1992) |
[16] | GArlt, DHennings, Gde With, J Appl Phys, 58, 1619(1985) |
[17] | FBatllo, NFloquet, MMaglione, IEEE, 1995 |
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