用金属有机物化学气相淀积(Metal Organic Chemical Vapor Deposition,MOCVD)制备了TiN薄膜,通过不同循环制备的、厚度相同的平面薄膜电阻率的比较研究了TiN薄膜的电学性质.结果表明,多次循环会引入界面而增大电阻率,与薄膜成分和微结构分析的结果一致.得到了单循环的最优厚度以使样品电阻率最低.通过相同循环、不同厚度样品在真实器件中电学性能的比较,发现介窗(Via)直径越小,TiN薄膜对介窗电阻的影响越大.
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