采用高分子热解和反应烧结方法制备出泡沫碳化硅陶瓷,研究了泡沫碳化硅陶瓷的体积分数变化和钛的掺杂对泡沫碳化硅陶瓷骨架导电性能的影响.结果表明:随着泡沫碳化硅陶瓷的体积分数提高,泡沫碳化硅陶瓷的电阻率降低,这是泡沫碳化硅陶瓷筋中部碳化硅的面积增加所引起的;掺杂的钛转变成TiSi2导电相改善了泡沫碳化硅陶瓷的导电性能.TiSi2呈现离散和团聚两种形态分布,以不规则的形状位于碳化硅晶界之间,在碳化硅中作为施主杂质.泡沫碳化硅陶瓷表现出的正或负温度系数取决与掺杂的钛量的多少.
参考文献
| [1] | Nerreship I.,Key Engineering Materials,122～124,305(1996) |
| [2] | Robert M.Orenstein and David J.Green,J.Am.Ceram.Soc.,75(7),1899(1992) |
| [3] | WEI Mingkun,ZHANG Guangjun,ZHANG Lipeng,WU Qide,Journal of The Chinese Ceramic Society,2,254(2002)(魏明坤,张广军,张丽鹏,武七德,硅酸盐学报,2,254(2002)) |
| [4] | Zhou H.,R.N.Singh,J.Am.Ceram.Soc.,78(9),2456(1995) |
| [5] | Yukio Takeda,Kousuke Nakamura,Kunihiro Maeda,and Yasuo Matsushita,J.Am.Ceram.Soc.,70(10),c266(1987) |
| [6] | Julie Runyan,Rosario A.Gerhardt and Robert Ruh.,J.Am.Ceram.Soc.,84(7),1490(2001) |
| [7] | Jeannine Saggio-Woyansky and Curtis E.Scott W.P.Minnear American Ceramic Society Bulletin,71(11),1674(1992) |
| [8] | O.Prakash,H.Sang,J.D.Embury,Materials Science and Engineering,A199,195(1995) |
| [9] | A.P.Roberts,M.A.Knackstedt,J.Mater.Sci.Lett.,14,1357(1995) |
| [10] | Vnkata R.Vedula,David J Green,and John R.Hellman,J.Am.Ceram.Soc.,82(3),649(1999) |
| [11] | Yang Zhenming,Zhang Jinsong,Cao Xiaoming,Liu Qiang,Xu Zhijun,Zou Zhimin,Applied Catalysis B:Environmental,34,129(2001) |
| [12] | DENG Zhijie,ZHENG Ansheng,Semiconductor Materials,(Beijing,Chemical Industry Publishing Company,2004) p.181(邓志杰,郑安生,半导体材料(北京,化学工业出版社,2004)p.181)) |
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